After the chemical mechanical planarization （CMP） process, the copper surface is contaminated by a mass of particles （e.g. silica） and organic residues （e.g. benzotriazole）, which could do great harm to the inte...After the chemical mechanical planarization （CMP） process, the copper surface is contaminated by a mass of particles （e.g. silica） and organic residues （e.g. benzotriazole）, which could do great harm to the integrated circuit, so post-CMP cleaning is essential. In particular, benzotriazole （BTA） forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper. So an effective cleaning solution is needed to remove BTA from the copper surface. In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA： one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution. The cleaning solution is formed of alkaline chelating agent （FA/O II type）, which is used to remove BTA, and a surfactant （FA/O I type）, which is used as a corrosion inhibitor. BTA removal is characterized by contact angle measurements and electrochemical techniques. The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques. The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface.展开更多
A novel cleaning solution, named FA/O alkaline cleaner, was proposed and demonstrated in the removal of colloidal silica abrasives. In order to remove both the chemical and physical absorbed colloidal silica abrasives...A novel cleaning solution, named FA/O alkaline cleaner, was proposed and demonstrated in the removal of colloidal silica abrasives. In order to remove both the chemical and physical absorbed colloidal silica abrasives, an FA/OII chelating agent and non-ionic surfactant were added into the cleaner. By varying the concentration of chelating agent and non-ionic surfactant, a series of experiments were performed to determine the best cleaning results. This paper discusses the mechanism of the removal of colloidal silica abrasives with a FA/O alkaline cleaner. Based on the experiment results, it is concluded that both the FA/OII chelating and non-ionic surfactant could benefit the removal of colloidal silica abrasives. When the concentration of FAJOII chelating agent and FA/O non-ionic surfactant reached the optima value, it was demonstrated that silica abrasives could be removed efficiently by this novel cleaning solution.展开更多
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(Nos.2009ZX02308-003,2014ZX02301003-007)
文摘After the chemical mechanical planarization （CMP） process, the copper surface is contaminated by a mass of particles （e.g. silica） and organic residues （e.g. benzotriazole）, which could do great harm to the integrated circuit, so post-CMP cleaning is essential. In particular, benzotriazole （BTA） forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper. So an effective cleaning solution is needed to remove BTA from the copper surface. In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA： one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution. The cleaning solution is formed of alkaline chelating agent （FA/O II type）, which is used to remove BTA, and a surfactant （FA/O I type）, which is used as a corrosion inhibitor. BTA removal is characterized by contact angle measurements and electrochemical techniques. The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques. The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface.
基金Project supported by the Specific Project Items No.2 in National Long-Term Technology Development Plan(No.2009zx02308-003)the Hebei Province Department of Education Fund(No.QN2014208)
文摘A novel cleaning solution, named FA/O alkaline cleaner, was proposed and demonstrated in the removal of colloidal silica abrasives. In order to remove both the chemical and physical absorbed colloidal silica abrasives, an FA/OII chelating agent and non-ionic surfactant were added into the cleaner. By varying the concentration of chelating agent and non-ionic surfactant, a series of experiments were performed to determine the best cleaning results. This paper discusses the mechanism of the removal of colloidal silica abrasives with a FA/O alkaline cleaner. Based on the experiment results, it is concluded that both the FA/OII chelating and non-ionic surfactant could benefit the removal of colloidal silica abrasives. When the concentration of FAJOII chelating agent and FA/O non-ionic surfactant reached the optima value, it was demonstrated that silica abrasives could be removed efficiently by this novel cleaning solution.
