Temperature and excitation dependent photoluminescence(PL) of InGaN epilayer grown on c-plane Ga N/sapphire template by molecular beam epitaxy(MBE) has been systematically investigated. The emission spectra of the sam...Temperature and excitation dependent photoluminescence(PL) of InGaN epilayer grown on c-plane Ga N/sapphire template by molecular beam epitaxy(MBE) has been systematically investigated. The emission spectra of the sample consisted of strong multiple peaks associated with one stimulated emission(SE) located at 430 nm and two spontaneous emissions(SPE) centered at about 450 nm and 480 nm, indicating the co-existence of shallow and deep localized states.The peak energy of SE exhibiting weak s-shaped variation with increasing temperature revealed the localization effect of excitons. Moreover, an abnormal increase of the SPE intensity with increasing temperature was also observed, which indicated that the carrier transfer between the shallow and deeper localized states exists. Temperature dependent time-resolved PL(TRPL) demonstrated the carrier transfer processes among the localized states. In addition, a slow thermalization of hot carriers was observed in InGaN film by using TRPL and transient differential reflectivity, which is attributed to the phonon bottleneck effect induced by indium aggregation.展开更多
Hinged mirror arrays are widely utilized for display applications and optical communication.They can be fabricated by an self-assembly technique using the strain in lattice-mismatched epitaxial layers.A multilayer str...Hinged mirror arrays are widely utilized for display applications and optical communication.They can be fabricated by an self-assembly technique using the strain in lattice-mismatched epitaxial layers.A multilayer structure including a strain-compensated layer,a digital alloy sacrificial layer and a strain bilayer,is grown by molecular-beam epitaxy.Self-assembly hinged mirrors on a GaAs substrate have been successfully fabricated by photolithography and selective etching.The hinge fabrication method with a strain bilayer is simple and flexible.Structures formed by multiple hinged plates will enable the self-assembly of more complex three-dimensional microstructures.展开更多
基金Project supported by the National Key Research Program of China(Grant No.2016YFB0501604)the National Natural Science Foundation of China(Grant Nos.10874127 and 61227902)
文摘Temperature and excitation dependent photoluminescence(PL) of InGaN epilayer grown on c-plane Ga N/sapphire template by molecular beam epitaxy(MBE) has been systematically investigated. The emission spectra of the sample consisted of strong multiple peaks associated with one stimulated emission(SE) located at 430 nm and two spontaneous emissions(SPE) centered at about 450 nm and 480 nm, indicating the co-existence of shallow and deep localized states.The peak energy of SE exhibiting weak s-shaped variation with increasing temperature revealed the localization effect of excitons. Moreover, an abnormal increase of the SPE intensity with increasing temperature was also observed, which indicated that the carrier transfer between the shallow and deeper localized states exists. Temperature dependent time-resolved PL(TRPL) demonstrated the carrier transfer processes among the localized states. In addition, a slow thermalization of hot carriers was observed in InGaN film by using TRPL and transient differential reflectivity, which is attributed to the phonon bottleneck effect induced by indium aggregation.
基金by the National Natural Science Foundation of China under Grant Nos 60976015 and 10990103the Natural Science Foundation of Shandong Province under Grant No ZR2010FM023the Open Project of State Key Laboratory of Functional Materials for Informatics.
文摘Hinged mirror arrays are widely utilized for display applications and optical communication.They can be fabricated by an self-assembly technique using the strain in lattice-mismatched epitaxial layers.A multilayer structure including a strain-compensated layer,a digital alloy sacrificial layer and a strain bilayer,is grown by molecular-beam epitaxy.Self-assembly hinged mirrors on a GaAs substrate have been successfully fabricated by photolithography and selective etching.The hinge fabrication method with a strain bilayer is simple and flexible.Structures formed by multiple hinged plates will enable the self-assembly of more complex three-dimensional microstructures.
