We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of...We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.展开更多
In marginally twisted bilayer graphene,the Moirépattern consists of the maximized AB(BA)stacking regions,minimized AA stacking regions and triangular networks of domain walls.Here we realize the strain-modulated ...In marginally twisted bilayer graphene,the Moirépattern consists of the maximized AB(BA)stacking regions,minimized AA stacking regions and triangular networks of domain walls.Here we realize the strain-modulated electronic structures of marginally twisted bilayer graphene by scanning tunneling microscopy/spectroscopy and density functional theory(DFT)calculations.The experimental data show four peaks near the Fermi energy at the AA regions.DFT calculations indicate that the two new peaks closer to the Fermi level may originate from the intrinsic heterostrain and the electric field implemented by back gate is likely to account for the observed shift of the four peaks.Furthermore,the d I/d V map across Moirépatterns with different strain strengths exhibits a distinct appearance of the helical edge states.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61888102)the National Natural Science Foundation of China(Grant No.12004417)+5 种基金the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant No.U2032206)Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061)Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000)Youth Innovation Promotion Association of CAS(Grant No.Y201902)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。
文摘We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.61888102 and U2032206)the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)+1 种基金Chinese Academy of Sciences(Grant Nos.XDB30000000,XDB36000000,YSBR003,and 112111KYSB20160061)the Fundamental Research Funds for the Central Universities,China。
文摘In marginally twisted bilayer graphene,the Moirépattern consists of the maximized AB(BA)stacking regions,minimized AA stacking regions and triangular networks of domain walls.Here we realize the strain-modulated electronic structures of marginally twisted bilayer graphene by scanning tunneling microscopy/spectroscopy and density functional theory(DFT)calculations.The experimental data show four peaks near the Fermi energy at the AA regions.DFT calculations indicate that the two new peaks closer to the Fermi level may originate from the intrinsic heterostrain and the electric field implemented by back gate is likely to account for the observed shift of the four peaks.Furthermore,the d I/d V map across Moirépatterns with different strain strengths exhibits a distinct appearance of the helical edge states.
