Atom tracking technology enhanced with innovative algorithms has been implemented in this study,utilizing a comprehensive suite of controllers and software independently developed domestically.Leveraging an on-board f...Atom tracking technology enhanced with innovative algorithms has been implemented in this study,utilizing a comprehensive suite of controllers and software independently developed domestically.Leveraging an on-board field-programmable gate array(FPGA)with a core frequency of 100 MHz,our system facilitates reading and writing operations across 16 channels,performing discrete incremental proportional-integral-derivative(PID)calculations within 3.4 microseconds.Building upon this foundation,gradient and extremum algorithms are further integrated,incorporating circular and spiral scanning modes with a horizontal movement accuracy of 0.38 pm.This integration enhances the real-time performance and significantly increases the accuracy of atom tracking.Atom tracking achieves an equivalent precision of at least 142 pm on a highly oriented pyrolytic graphite(HOPG)surface under room temperature atmospheric conditions.Through applying computer vision and image processing algorithms,atom tracking can be used when scanning a large area.The techniques primarily consist of two algorithms:the region of interest(ROI)-based feature matching algorithm,which achieves 97.92%accuracy,and the feature description-based matching algorithm,with an impressive 99.99%accuracy.Both implementation approaches have been tested for scanner drift measurements,and these technologies are scalable and applicable in various domains of scanning probe microscopy with broad application prospects in the field of nanoengineering.展开更多
We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P...We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.展开更多
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phos...Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carder densities or in the ON state, tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carder densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ～ 67.3 meV can be extracted from the thermal emission-diffusion theory.展开更多
基金Project supported by the National Science Fund for Distinguished Young Scholars(Grant No.T2125014)the Special Fund for Research on National Major Research Instruments of the National Natural Science Foundation of China(Grant No.11927808)the CAS Key Technology Research and Development Team Project(Grant No.GJJSTD20200005)。
文摘Atom tracking technology enhanced with innovative algorithms has been implemented in this study,utilizing a comprehensive suite of controllers and software independently developed domestically.Leveraging an on-board field-programmable gate array(FPGA)with a core frequency of 100 MHz,our system facilitates reading and writing operations across 16 channels,performing discrete incremental proportional-integral-derivative(PID)calculations within 3.4 microseconds.Building upon this foundation,gradient and extremum algorithms are further integrated,incorporating circular and spiral scanning modes with a horizontal movement accuracy of 0.38 pm.This integration enhances the real-time performance and significantly increases the accuracy of atom tracking.Atom tracking achieves an equivalent precision of at least 142 pm on a highly oriented pyrolytic graphite(HOPG)surface under room temperature atmospheric conditions.Through applying computer vision and image processing algorithms,atom tracking can be used when scanning a large area.The techniques primarily consist of two algorithms:the region of interest(ROI)-based feature matching algorithm,which achieves 97.92%accuracy,and the feature description-based matching algorithm,with an impressive 99.99%accuracy.Both implementation approaches have been tested for scanner drift measurements,and these technologies are scalable and applicable in various domains of scanning probe microscopy with broad application prospects in the field of nanoengineering.
基金supported by the Science Fund from the Ministry of Science and Technology of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+1 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and 51210003)the Chinese Academy of Sciences(CAS) and Youth Innovation Promotion Association of CAS(Grant No.20150005)
文摘We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.
基金Project supported by the National Basic Research Program of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+2 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and51210003)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.20150005)the China Postdoctoral Science Foundation(Grant No.2017M623146)
文摘Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carder densities or in the ON state, tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carder densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ～ 67.3 meV can be extracted from the thermal emission-diffusion theory.
