We investigate the thermoelectric properties of GaN with p- and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors （Sacr） of p-type GaN （-3500 ...We investigate the thermoelectric properties of GaN with p- and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors （Sacr） of p-type GaN （-3500 μW/mK2） is about twice that of the n-type （-1750 μW/mK2）, which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit （ZT） estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.展开更多
The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type dopi...The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type doping. The transport coefficients can be tuned by doping and changing the work temperature to yield an optimized thermoelectric performance. The optimal doping concentration is 2 × 10^20 cm^-3, in which the maximum ZT value can reach 1.65 at 900 K. The results suggest CuGaTe2 might find promising applications as good thermoelectric materials, particularly at high temperature.展开更多
基金supported by the National Natural Science Foundation of China(Nos.91122015 and 20973174)
文摘We investigate the thermoelectric properties of GaN with p- and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors （Sacr） of p-type GaN （-3500 μW/mK2） is about twice that of the n-type （-1750 μW/mK2）, which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit （ZT） estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.
基金Supported by the National Natural Science Foundation of China(Nos.20973174 and 91122015)the Scientific Research Foundation of Guangxi University(No.XBZ120059)
文摘The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type doping. The transport coefficients can be tuned by doping and changing the work temperature to yield an optimized thermoelectric performance. The optimal doping concentration is 2 × 10^20 cm^-3, in which the maximum ZT value can reach 1.65 at 900 K. The results suggest CuGaTe2 might find promising applications as good thermoelectric materials, particularly at high temperature.
