Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing cry...Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.展开更多
Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spec...Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as -9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.展开更多
The instability of lead halide perovskites in various application-related conditions is a key challenge to be resolved. We investigated the formation of metal nanoparticles during transmission electron microscopy(TEM)...The instability of lead halide perovskites in various application-related conditions is a key challenge to be resolved. We investigated the formation of metal nanoparticles during transmission electron microscopy(TEM) imaging of perovskite-related metal halide compounds. The metal nanoparticle formation on these materials originates from stimulated desorption of halogen under electron beams and subsequent aggregation of metal atoms. Based on shared mechanisms,the TEM-based degradation test can help to evaluate the material stability against light irradiation.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No 4WS035-A72-134.
文摘Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
基金supported by the National Natural Science Foundation of China (Grant No 60776009)
文摘Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as -9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.
基金financially supported by the National Natural Science Foundation of China(22005354 and 62025403)Guangdong Basic and Applied Basic Research Foundation(2019A1515110905)+2 种基金Shenzhen Fundamental Research Program(JCYJ20200109142425294)in part supported by funds from Guangdong Science and Technology Program(2019ZT08L075 and 2019QN01L118)in part supported by the Innovation and Technology Commission of Hong Kong SAR(ITS/390/18)。
基金supported by the Recruiting Program of Sun Yatsen University in China (No. 76180-18841225)the funding from the European Union under grant agreement No. 614897 (ERC Grant TRANS-NANO)。
文摘The instability of lead halide perovskites in various application-related conditions is a key challenge to be resolved. We investigated the formation of metal nanoparticles during transmission electron microscopy(TEM) imaging of perovskite-related metal halide compounds. The metal nanoparticle formation on these materials originates from stimulated desorption of halogen under electron beams and subsequent aggregation of metal atoms. Based on shared mechanisms,the TEM-based degradation test can help to evaluate the material stability against light irradiation.
