We report the demonstration of a monolithic phase shifter employing Bi_(1.5)Zn_(1.0)Nb_(1.5)O_(7)/Ba_(0.5)Sr_(0.5)TiO_(3)(BST)thin films on sapphire substrates.The BST and BZN thin films are successively deposited by ...We report the demonstration of a monolithic phase shifter employing Bi_(1.5)Zn_(1.0)Nb_(1.5)O_(7)/Ba_(0.5)Sr_(0.5)TiO_(3)(BST)thin films on sapphire substrates.The BST and BZN thin films are successively deposited by radio-frequency magnetron sputtering.A distributed phase shifter with a coplanar-waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated.The return loss of the circuit is better than-13 dB from 1 to 12 GHz,and it provides 65°phase shift with an insertion loss of-4 dB at 12 GHz.The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.展开更多
Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM...Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized,no second phase was found in the result.BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire.The BMN thin film has a high dielectric tunability of 43%at a bias voltage of 1.5 MV/cm,with loss tangent lower than 0.009.A Raman study of BMN cubic pyrochlore reveals O′-A-O′and O-A-O bending modes contribute to 80%of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant.Berry Phase calculation results shows that A2O′tetrahedrons are more easy to distort under an external field.The A-site Mg have the highest displacement(0.765028 A),followed by A-site Bi cations(0.346317˚A).Compared to zero-bias thin film,˚the biased one with A-O and A-O′bonds being stretched and external coulomb force applied on cations and anions,the dielectric constant under bias field dramatically decreased.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60871049 and 50972024.
文摘We report the demonstration of a monolithic phase shifter employing Bi_(1.5)Zn_(1.0)Nb_(1.5)O_(7)/Ba_(0.5)Sr_(0.5)TiO_(3)(BST)thin films on sapphire substrates.The BST and BZN thin films are successively deposited by radio-frequency magnetron sputtering.A distributed phase shifter with a coplanar-waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated.The return loss of the circuit is better than-13 dB from 1 to 12 GHz,and it provides 65°phase shift with an insertion loss of-4 dB at 12 GHz.The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.
基金supported by the National Natural Science Foundation of China(Grant No.51602037)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices(Grant No.KFJJ201510).
文摘Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized,no second phase was found in the result.BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire.The BMN thin film has a high dielectric tunability of 43%at a bias voltage of 1.5 MV/cm,with loss tangent lower than 0.009.A Raman study of BMN cubic pyrochlore reveals O′-A-O′and O-A-O bending modes contribute to 80%of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant.Berry Phase calculation results shows that A2O′tetrahedrons are more easy to distort under an external field.The A-site Mg have the highest displacement(0.765028 A),followed by A-site Bi cations(0.346317˚A).Compared to zero-bias thin film,˚the biased one with A-O and A-O′bonds being stretched and external coulomb force applied on cations and anions,the dielectric constant under bias field dramatically decreased.
