Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission elec...Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.展开更多
In order to improve the quality of detector, In_x Ga_(1-x)As(x=0.82) buffer layer has been introduced in In_(0.82)Ga_(0.18)As/In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and ...In order to improve the quality of detector, In_x Ga_(1-x)As(x=0.82) buffer layer has been introduced in In_(0.82)Ga_(0.18)As/In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy(TEM) and high resolution transmission electron microscopy(HRTEM). The dislocations are effectively suppressed in In_x Ga_(1-x)As(x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation(MD). The threading dislocations(TDs) are directly related to the multiplication of the MDs in buffer layer.展开更多
基金supported by the National Key Basic Research Program of China(No.2012CB619200)the National Natural Science Foundation of China(No.61474053)+1 种基金the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University(No.20161806)the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)
文摘Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.
基金supported by the National Natural Science Foundation of China(No.61474053)the 2014 Natural Science Basic Research Open Foundation of the Key Lab.of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)
文摘In order to improve the quality of detector, In_x Ga_(1-x)As(x=0.82) buffer layer has been introduced in In_(0.82)Ga_(0.18)As/In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy(TEM) and high resolution transmission electron microscopy(HRTEM). The dislocations are effectively suppressed in In_x Ga_(1-x)As(x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation(MD). The threading dislocations(TDs) are directly related to the multiplication of the MDs in buffer layer.
