Using first-principle calculations, we investigate the mechanical, structural, and electronic properties and formation energy of 25 kinds of Ⅲ–V binary monolayers in detail. A relative radius of the binary compound ...Using first-principle calculations, we investigate the mechanical, structural, and electronic properties and formation energy of 25 kinds of Ⅲ–V binary monolayers in detail. A relative radius of the binary compound according to the atomic number in the periodic table is defined, and based on the definition, the 25 kinds of Ⅲ–V binary compounds are exactly located at a symmetric position in a symmetric matrix. The mechanical properties and band gaps are found to be very dependent on relative radius, while the effective mass of holes and electrons are found to be less dependent. A linear function between Young’s modulus and formation energy is fitted with a linear relation in this paper. The change regularity of physical properties of B–V(V = P, As, Sb, Bi) and Ⅲ–N(Ⅲ = Al, Ga, In, Tl) are found to be very different from those of other Ⅲ–V binary compounds.展开更多
GaAs multiple concentric nano-ring structures(CNRs)are prepared with multistep crystallization procedures by droplets epitaxy on GaAs(001)to explore the influence of different initial crystallization temperatures on C...GaAs multiple concentric nano-ring structures(CNRs)are prepared with multistep crystallization procedures by droplets epitaxy on GaAs(001)to explore the influence of different initial crystallization temperatures on CNRs morphology.Atomic force microscope(AFM)images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy.Meanwhile,with the increase of initial crystallization temperature,the inner ring height and density of CNRs are increased,and outer rings are harder to form.In addition,the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory.The method can be used to calculate the diffusion activation energy of gallium atoms(0.7±0.1 eV)on the GaAs(001)surface conveniently.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61564002 and 11664005)the Guizhou Normal University Innovation and Entrepreneurship Education Research Center Foundation(Grant No.0418010)the Joint Foundation of Guizhou Normal University(Grant No.7341)
文摘Using first-principle calculations, we investigate the mechanical, structural, and electronic properties and formation energy of 25 kinds of Ⅲ–V binary monolayers in detail. A relative radius of the binary compound according to the atomic number in the periodic table is defined, and based on the definition, the 25 kinds of Ⅲ–V binary compounds are exactly located at a symmetric position in a symmetric matrix. The mechanical properties and band gaps are found to be very dependent on relative radius, while the effective mass of holes and electrons are found to be less dependent. A linear function between Young’s modulus and formation energy is fitted with a linear relation in this paper. The change regularity of physical properties of B–V(V = P, As, Sb, Bi) and Ⅲ–N(Ⅲ = Al, Ga, In, Tl) are found to be very different from those of other Ⅲ–V binary compounds.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61564002 and 11664005)the Science and Technology Foundation of Guizhou Province,China(Grant No.QKH-[2017]1055)Guizhou University Talent Foundation(Grant No.GDJHZ-[2015]23)。
文摘GaAs multiple concentric nano-ring structures(CNRs)are prepared with multistep crystallization procedures by droplets epitaxy on GaAs(001)to explore the influence of different initial crystallization temperatures on CNRs morphology.Atomic force microscope(AFM)images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy.Meanwhile,with the increase of initial crystallization temperature,the inner ring height and density of CNRs are increased,and outer rings are harder to form.In addition,the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory.The method can be used to calculate the diffusion activation energy of gallium atoms(0.7±0.1 eV)on the GaAs(001)surface conveniently.
