设计制备出三明治结构的电容式柔性压力传感器,并对其性能进行研究。该传感器以银纳米线为电极材料,聚二甲基硅氧烷(PDMS)为柔性衬底,同时采用毛面玻璃和光面玻璃分别作为柔性衬底的制备模板,制备出微纳结构和平面结构的PDMS薄膜。然后...设计制备出三明治结构的电容式柔性压力传感器,并对其性能进行研究。该传感器以银纳米线为电极材料,聚二甲基硅氧烷(PDMS)为柔性衬底,同时采用毛面玻璃和光面玻璃分别作为柔性衬底的制备模板,制备出微纳结构和平面结构的PDMS薄膜。然后采用喷涂法制备Ag NWs/PDMS复合电极,以另外一层PDMS为介电层,将两电极面对面封装,得到电容式柔性压力传感器,最后系统研究了传感器的电极微纳结构对器件性能的影响。本文研究表明,具有微纳结构的AgNWs/PDMS复合薄膜传感器的灵敏度为1.0 k Pa^(-1),而平面结构的Ag NWs/PDMS复合薄膜传感器的灵敏度为0.6 k Pa^(-1),由此可知具有微纳结构的柔性衬底能够显著提高器件的灵敏度。展开更多
We choose 8-hydroxyquinoline derivative-metal complexes（Beq,Mgq,and Znq） as the acceptors（A） and 4,4＇,4”-tri-（2-methylphenyl phenylamino） triphenylaine（m-MTDATA） as the donor（D） respectively to study the e...We choose 8-hydroxyquinoline derivative-metal complexes（Beq,Mgq,and Znq） as the acceptors（A） and 4,4＇,4”-tri-（2-methylphenyl phenylamino） triphenylaine（m-MTDATA） as the donor（D） respectively to study the existing energy transfer process in the organic ultraviolet（UV） photodetector（PD）,which has an important influence on the sensitivity of PDs.The energy transfer process from D to A without exciplex formation is discussed,differing from the working mechanism of previous PDs with Gaq[Zisheng Su,Wenlian Li,Bei Chu,Tianle Li,Jianzhuo Zhu,Guang Zhang,Fei Yan,Xiao Li,Yiren Chen and Chun-Sing Lee 2008 Appl.Phys.Lett.93 103309）]and REq[J.B.Wang,W.L.Li,B.Chu,L.L.Chen,G.Zhang,Z.S.Su,Y.R.Chen,D.F.Yang,J.Z.Zhu,S.H.Wu,F.Yan,H.H.Liu,C.S.Lee 2010 Org.Electron.111301]used as an A material.Under 365-nm UV irradiation with an intensity of 1.2 mW/cm^2,the m-MTDATA：Beq blend device with a weight ratio of 1：1 shows a response of 192 mAAV with a detectivity of 6.5 × 10^（11） Jones,which exceeds those of PDs based on Mgq（146 mA/W） and Znq（182 mA/W） due to better energy level alignment between m-MTDATA/Beq and lower radiative decay.More photophysics processes of the PDs involved are discussed in detail.展开更多
The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes （UV-LEDs） are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced ...The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes （UV-LEDs） are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced in the N-face AIGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.展开更多
文摘设计制备出三明治结构的电容式柔性压力传感器,并对其性能进行研究。该传感器以银纳米线为电极材料,聚二甲基硅氧烷(PDMS)为柔性衬底,同时采用毛面玻璃和光面玻璃分别作为柔性衬底的制备模板,制备出微纳结构和平面结构的PDMS薄膜。然后采用喷涂法制备Ag NWs/PDMS复合电极,以另外一层PDMS为介电层,将两电极面对面封装,得到电容式柔性压力传感器,最后系统研究了传感器的电极微纳结构对器件性能的影响。本文研究表明,具有微纳结构的AgNWs/PDMS复合薄膜传感器的灵敏度为1.0 k Pa^(-1),而平面结构的Ag NWs/PDMS复合薄膜传感器的灵敏度为0.6 k Pa^(-1),由此可知具有微纳结构的柔性衬底能够显著提高器件的灵敏度。
基金supported by the National Natural Science Foundation of China(Grant Nos.61371046,61405026,61474016,and 61421002)China Postdoctoral Science Foundation(Grant No.2014M552330)
文摘We choose 8-hydroxyquinoline derivative-metal complexes（Beq,Mgq,and Znq） as the acceptors（A） and 4,4＇,4”-tri-（2-methylphenyl phenylamino） triphenylaine（m-MTDATA） as the donor（D） respectively to study the existing energy transfer process in the organic ultraviolet（UV） photodetector（PD）,which has an important influence on the sensitivity of PDs.The energy transfer process from D to A without exciplex formation is discussed,differing from the working mechanism of previous PDs with Gaq[Zisheng Su,Wenlian Li,Bei Chu,Tianle Li,Jianzhuo Zhu,Guang Zhang,Fei Yan,Xiao Li,Yiren Chen and Chun-Sing Lee 2008 Appl.Phys.Lett.93 103309）]and REq[J.B.Wang,W.L.Li,B.Chu,L.L.Chen,G.Zhang,Z.S.Su,Y.R.Chen,D.F.Yang,J.Z.Zhu,S.H.Wu,F.Yan,H.H.Liu,C.S.Lee 2010 Org.Electron.111301]used as an A material.Under 365-nm UV irradiation with an intensity of 1.2 mW/cm^2,the m-MTDATA：Beq blend device with a weight ratio of 1：1 shows a response of 192 mAAV with a detectivity of 6.5 × 10^（11） Jones,which exceeds those of PDs based on Mgq（146 mA/W） and Znq（182 mA/W） due to better energy level alignment between m-MTDATA/Beq and lower radiative decay.More photophysics processes of the PDs involved are discussed in detail.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204098, 61371046 and 61101030, the National Higher-education Institution General Research and Development Funding under Grant No ZYGX2013J063, and the China Postdoctoral Science Foundation under Grant No 2014M552330.
文摘The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes （UV-LEDs） are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced in the N-face AIGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.
