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依发光层顺序和厚度调节的多发光层白色有机发光器件 被引量:1
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作者 徐维 鲁富翰 +4 位作者 曹进 朱文清 蒋雪茵 张志林 许少鸿 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2008年第2期265-268,共4页
多层结构器件中发光层顺序及厚度对光谱影响很大。文章以RBG(红蓝绿)为基色,制备了具有不同发光层组合次序及厚度的系列白色有机电致发光器件。器件结构为ITO/CuPc(12nm)/NPB(50nm)/EML/LiF(1nm)/Al(100nm)。使用的蓝色发光材料为2-t-bu... 多层结构器件中发光层顺序及厚度对光谱影响很大。文章以RBG(红蓝绿)为基色,制备了具有不同发光层组合次序及厚度的系列白色有机电致发光器件。器件结构为ITO/CuPc(12nm)/NPB(50nm)/EML/LiF(1nm)/Al(100nm)。使用的蓝色发光材料为2-t-butyl-9,10-di-(2-naphthyl)anthracene(TBADN),掺杂剂为p-bis(p-N,N-diphenyl-amono-styryl)benzene(DSA-Ph),绿色发光材料为tris-[8-hydroxyquino-line]aluminum(Alq3),掺杂剂为C545,红色发光材料为tris-[8-hydroxyquinoline]aluminum(Alq3),掺杂剂为4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB)。通过调节各发光层的顺序和厚度,在200mA.cm-2时,得到了电流效率为5.60cd.A-1,色坐标为(0.34,0.34)的性能稳定的白光器件。当电流密度为400mA.cm-2时,最大亮度达到了20700cd.m-2。根据激子产生及扩散理论对实验结果进行了分析,建立了发光光谱与各发光层的发光效率、各层厚度及激子扩散层长度之间的关系方程,并以其计算了具有不同红层厚度的RBG结构的光谱的红蓝强度比。计算结果表明实验结果与理论相符。 展开更多
关键词 有机发光二极管 白色有机发光器件 多发光层 RBG结构 激子扩散长度
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Organic Light-Emitting Diodes by Doping Liq into an Electron Transport Layer 被引量:1
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作者 徐维 鲁富翰 +3 位作者 蒋雪茵 张志林 朱文清 徐贵 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期33-38,共6页
Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium (Liq) doped into 4' 7- diphyenyl-1,10-phenanthroline (BPhen) as ETL and a p-doping tr... Organic light emitting diodes (OLEDs) incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium (Liq) doped into 4' 7- diphyenyl-1,10-phenanthroline (BPhen) as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane (F4- TCNQ) doped into 4,4′, 4″-tris (3-methylphenylphenylamono) triphe- nylamine (m-MTDATA) are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping (BPhen:33wt% Liq) layer as an electron transport layer (ETL) and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer (HTL). Compared with the control device (without doping) , the current efficiency and power efficiency of the most efficient device (device C) are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone. 展开更多
关键词 P-I-N N-DOPING current efficiency electron transport CONDUCTIVITY
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OTFT with Bilayer Gate Insulator and Modificative Electrode
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作者 白钰 哈克 +2 位作者 鲁富翰 蒋雪茵 张志林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期650-654,共5页
An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 l... An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance. 展开更多
关键词 organic thin film transistor modified electrode bilayer insulator MOBILITY
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具有阶梯势垒的低压有机电致发光器件 被引量:2
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作者 徐维 鲁富翰 +2 位作者 蒋雪茵 张志林 朱文清 《光电子.激光》 EI CAS CSCD 北大核心 2008年第7期865-868,共4页
在2-t-butyl-9,10-di-(2-naphthyl)anthracene(TBADN)/tris(8-hydroxyquinoline)aluminum(Alq3)界面及TBADN/4’7-diphyenyl-1,10-phenanthroline(Bphen)界面上插入Gaq薄膜作为阶梯势垒,使有机电致发光器件的电子注入得到改善。由于Gaq(... 在2-t-butyl-9,10-di-(2-naphthyl)anthracene(TBADN)/tris(8-hydroxyquinoline)aluminum(Alq3)界面及TBADN/4’7-diphyenyl-1,10-phenanthroline(Bphen)界面上插入Gaq薄膜作为阶梯势垒,使有机电致发光器件的电子注入得到改善。由于Gaq(2.9 eV)的LUMO(分子最低空余轨道能级)位于Alq3(3.1 eV)(或Bphen(3.0eV))的LUMO和TBADN的LUMO(2.8 eV)之间,形成了从Alq3(或Bphen)经Gaq到TBADN的势垒阶梯,提高了电子注入,进而提高了器件效率。实验表明:与没有阶梯势垒的器件相比,无论是单一电子器件还是完整器件,在相同电流密度下,具有阶梯势垒的器件的电压都有所下降。在电流密度为20 mA/cm2时,当电子传输层为Alq3时,单一电子器件的电压从7.9 V降到4.9 V,完整器件的电压从7 V降到5.8 V;当电子传输层为Bphen时,单一电子器件的电压从4.2 V降到3.1 V,完整器件的电压从6.2 V降到5.1 V。在电流密度为200mA/cm2,Alq3为电子传输层时,亮度从1 992 cd/m2升到3 281 cd/m2,最高亮度达到3 420 cd/m2,Bphen为电子传输层时,亮度从1745 cd/m2升到2876 cd/m2,最高亮度达到3176 cd/m2。本文运用能级隧穿理论对上述现象进行了解释。 展开更多
关键词 有机薄膜电致发光 低压 阶梯势垒 隧穿理论
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Estimation of electron mobility of n-doped 4,7-diphenyl-1,10-phenanthroline using space-charge-limited currents
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作者 希扎尔.乌尔.哈克 鲁富翰 +4 位作者 蒋雪茵 张志林 张小文 张良 李俊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第11期63-66,共4页
The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinatolithium (Liq) at various thicknesses (50-300 nm) have been estimated by using space-charge-limited current measurem... The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinatolithium (Liq) at various thicknesses (50-300 nm) have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/(V.s) (at 0.3 MV/cm) with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen (3.4 × 10^-4 cm^2/(V.s)) measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated. 展开更多
关键词 DOPING electron mobility SCLC 8-hydroxyquinolinonate-lithium (Liq)
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