Homo-epitaxial layers are successfully grown on Si-face 4°off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system.The smooth surface without morphological defects is obtained by ...Homo-epitaxial layers are successfully grown on Si-face 4°off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system.The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature.Schottky diodes fabricated on the epilayer present a typical I–V characteristic.This is the first report of Schottky diodes fabricated on 4°off-axis 4H-SiC substrates made in China.展开更多
文摘Homo-epitaxial layers are successfully grown on Si-face 4°off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system.The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature.Schottky diodes fabricated on the epilayer present a typical I–V characteristic.This is the first report of Schottky diodes fabricated on 4°off-axis 4H-SiC substrates made in China.
