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金属掺杂对碲化镉纳米器件整流特性的影响
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作者 杨金彪 廖文虎 鲍海瑞 《吉首大学学报(自然科学版)》 CAS 2023年第6期75-79,共5页
结合密度泛函理论与非平衡格林函数,系统研究了过渡金属(铜铬、铜钒和铜钛)共掺杂碲化镉纳米电子器件的伏安特性.结果表明,3种不同共掺杂碲化镉纳米器件的伏安特性曲线均为二极管伏安特性曲线,并且在[+0.4 V,+0.8 V]偏压范围内均产生了... 结合密度泛函理论与非平衡格林函数,系统研究了过渡金属(铜铬、铜钒和铜钛)共掺杂碲化镉纳米电子器件的伏安特性.结果表明,3种不同共掺杂碲化镉纳米器件的伏安特性曲线均为二极管伏安特性曲线,并且在[+0.4 V,+0.8 V]偏压范围内均产生了强整流效应,最高整流比分别为5.4×10^(4),3.8×105,2.1×106,投影态密度进一步印证了器件在+1.0 V偏压条件下的高整流比.在铜铬共掺杂条件下,随着中心区域沟道长度的增加,器件的电流在+0.9 V偏压时有一定程度的降低,但是在[+0.5 V,+0.7 V]偏压范围内,整体整流性能得到了显著提升. 展开更多
关键词 碲化镉 过渡金属掺杂 伏安特性 整流
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外加电场和磁场对外尔半金属能带结构的调控
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作者 罗淑珍 廖文虎 鲍海瑞 《吉首大学学报(自然科学版)》 CAS 2023年第6期80-89,共10页
基于紧束缚近似下的低能有效哈密顿模型,研究了外加电场、外加磁场及同时外加电场和磁场对外尔半金属电子能带结构的调控作用.结果表明,仅在正向(负向)电场作用下,随着电场强度的不断增大,体系的外尔点逐渐向布里渊区边界(布里渊区中心... 基于紧束缚近似下的低能有效哈密顿模型,研究了外加电场、外加磁场及同时外加电场和磁场对外尔半金属电子能带结构的调控作用.结果表明,仅在正向(负向)电场作用下,随着电场强度的不断增大,体系的外尔点逐渐向布里渊区边界(布里渊区中心)移动,当电场强度增大到一定程度时,可以实现半金属向半导体或绝缘体的转变;仅在外加磁场作用下,外尔半金属可以形成分立的朗道能级,n=0子带不随着磁长度的增加而变化,n=1和n=2子带随着磁长度的增加不断向费米能级靠近,且相同指标导带和价带间的能隙不断减小;在保持磁长度不变的条件下,体系的外尔点随着外加正向(负向)电场强度的增大逐渐向布里渊区边界(布里渊区中心)移动,在适当的外加电场作用下,n=0子带由部分占据的价带变为第一导带或完全占据的第一价带,实现半金属向半导体或绝缘体的转变. 展开更多
关键词 外尔半金属 电场 磁场 能带结构
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Width-Dependent Optical Properties for Zigzag-Edge Silicene Nanoribbons
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作者 鲍海瑞 廖文虎 +1 位作者 张新成 左敏 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第1期31-35,共5页
We study theoretically the optical response for perfect zigzag-edge silicene nanoribbons with N silicon atoms of the A and B sublattices(N-ZSiNRs) under the irradiation of an external electromagnetic field at low te... We study theoretically the optical response for perfect zigzag-edge silicene nanoribbons with N silicon atoms of the A and B sublattices(N-ZSiNRs) under the irradiation of an external electromagnetic field at low temperatures.The 8- and 16-ZSiNRs are demonstrated to exhibit a broad energy regime of absorption coefficient, refractive index, extinction coefficient, and reflectivity from infrared to ultraviolet, utilizing the dipole-transition theorem for semiconductors. The optical spectra for 8- and 16-ZSiNRs may be classified into two types of the transitions,one between valence and conduction subbands with the same parity, and the other among the edge state and bulk state subbands. With the increase of the ribbon width, the optical spectra for ZSiNRs are proved to exhibit red shift and blue shift at the lower and higher energy regimes, respectively. The obtained novel features are believed to be of significance in designs of silicene-based optoelectronic devices. 展开更多
关键词 NR Width-Dependent Optical Properties for Zigzag-Edge Silicene Nanoribbons
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Electronic structures and topological properties of TeSe_(2) monolayers
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作者 万正阳 郇昊 +2 位作者 鲍海瑞 刘晓娟 杨中芹 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期538-544,共7页
The successfully experimental fabrication of two-dimensional Te monolayer films[Phys.Rev.Lett.119106101(2017)]has promoted the researches on the group-VI monolayer materials.In this work,the electronic structures and ... The successfully experimental fabrication of two-dimensional Te monolayer films[Phys.Rev.Lett.119106101(2017)]has promoted the researches on the group-VI monolayer materials.In this work,the electronic structures and topological properties of a group-VI binary compound of TeSe_(2) monolayers are studied based on the density functional theory and Wannier function method.Three types of structures,namely,a-TeSe_(2),b-TeSe_(2),and g-TeSe_(2),are proposed for the TeSe_(2) monolayer among which the a-TeSe_(2) is found being the most stable.All the three structures are semiconductors with indirect band gaps.Very interestingly,the g-TeSe_(2) monolayer becomes a quantum spin Hall(QSH)insulator with a global nontrivial energy gap of 0.14 eV when a 3.5%compressive strain is applied.The opening of the global band gap is understood by the competition between the decrease of the local band dispersion and the weakening of the interactions between the Se px,py orbitals and Te px,py orbitals during the process.Our work realizes topological states in the group-VI monolayers and promotes the potential applications of the materials in spintronics and quantum computations. 展开更多
关键词 two-dimensional material monolayer TeSe_(2) quantum spin Hall effect topological insulator
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