Anodic passive filins formed on Fe60Ni40 in H3BO3-Na2B4O7 buffer solution (pH=9.20) and in H3PO4-Na2HPO4 buffer solution (pH=7.41) have been investigated by XPS. By analysis of the chemical states of elements, compone...Anodic passive filins formed on Fe60Ni40 in H3BO3-Na2B4O7 buffer solution (pH=9.20) and in H3PO4-Na2HPO4 buffer solution (pH=7.41) have been investigated by XPS. By analysis of the chemical states of elements, components and structure of films,we have probed into the mechanism of the formation of the anodic passive films. In the H3BO3-Na2B4O7 buffer solution (pH=9.20), the formation of passive film was controlled by adsorption of OH-, and the growth of the passive film was a function of passivation potential and time in passive range. The duplex structure, the Fe 、Ni/FeOx、NiO/FeOOH、 Ni(OH)2 was confirmed by detailed peak analysis and profiling. In H3PO4-Na2HPO4 buffer solution (pH= 7.41), the formation of passive film was controlled by competitive react, that is, cations of anodic dissolution reacted with anions such as PO and OH- et al in solution to form compacted deposit films of the phosphate phase.展开更多
主要针对LTCC(Low Temperature Co-fired Ceramic)滤波器电气连通率较低的问题进行了相关研究。通过比较,发现自制的LTCC滤波器端口导带露出端偏薄,从而导致在端口印上导带之后与中间层导带在端口处的电气连接性能不佳。通过进一步的分...主要针对LTCC(Low Temperature Co-fired Ceramic)滤波器电气连通率较低的问题进行了相关研究。通过比较,发现自制的LTCC滤波器端口导带露出端偏薄,从而导致在端口印上导带之后与中间层导带在端口处的电气连接性能不佳。通过进一步的分析,发现导致滤波器端口导带过薄的原因有两个,一是生瓷切片时刀口的带瓷,二是烧结过程中导体浆料与瓷体材料的收缩率不一致导致导体内缩。最后针对性地提出了相应的改进措施,获得了最优化的工艺技术方案。展开更多
Oxygen adsorption on Rb-covered InSb(111)surface has been studied at room temperature as a function of Rb coverage using ultraviolet photoelectron spectroscopy.At low O_(2) exposures,the intensity ratio of O^(2-)_(2) ...Oxygen adsorption on Rb-covered InSb(111)surface has been studied at room temperature as a function of Rb coverage using ultraviolet photoelectron spectroscopy.At low O_(2) exposures,the intensity ratio of O^(2-)_(2) to O^(2-)increases with Rb coverage.The surfaces with low Rb coverages are mainly covered by Sb oxides,causing an increase of work function.For high Rb coverages,the Sb atoms are oxidized below a thin layer of Rb peroxide,which is related to an initial decrease of the work function.At high O_(2) exposures,the intensity of O^(-)_(2) ion increases with Rb coverage.展开更多
We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110)surface.A GaSb(110)sample covered with 10 monolayers Ce was used to adsorb oxygen.When the exposure...We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110)surface.A GaSb(110)sample covered with 10 monolayers Ce was used to adsorb oxygen.When the exposure of O_(2) was up to 50L,the oxide of cerium,Ce_(2)O_(3),began to change into unstable CeO_(2).The dissociation of CeO_(2) resulted in strong oxidation of the substrate.The main products are Ga_(2)O_(3),Sb_(2)O_(3),and then Sb_(2)O_(5).After annealing,a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.展开更多
文摘Anodic passive filins formed on Fe60Ni40 in H3BO3-Na2B4O7 buffer solution (pH=9.20) and in H3PO4-Na2HPO4 buffer solution (pH=7.41) have been investigated by XPS. By analysis of the chemical states of elements, components and structure of films,we have probed into the mechanism of the formation of the anodic passive films. In the H3BO3-Na2B4O7 buffer solution (pH=9.20), the formation of passive film was controlled by adsorption of OH-, and the growth of the passive film was a function of passivation potential and time in passive range. The duplex structure, the Fe 、Ni/FeOx、NiO/FeOOH、 Ni(OH)2 was confirmed by detailed peak analysis and profiling. In H3PO4-Na2HPO4 buffer solution (pH= 7.41), the formation of passive film was controlled by competitive react, that is, cations of anodic dissolution reacted with anions such as PO and OH- et al in solution to form compacted deposit films of the phosphate phase.
文摘主要针对LTCC(Low Temperature Co-fired Ceramic)滤波器电气连通率较低的问题进行了相关研究。通过比较,发现自制的LTCC滤波器端口导带露出端偏薄,从而导致在端口印上导带之后与中间层导带在端口处的电气连接性能不佳。通过进一步的分析,发现导致滤波器端口导带过薄的原因有两个,一是生瓷切片时刀口的带瓷,二是烧结过程中导体浆料与瓷体材料的收缩率不一致导致导体内缩。最后针对性地提出了相应的改进措施,获得了最优化的工艺技术方案。
文摘Oxygen adsorption on Rb-covered InSb(111)surface has been studied at room temperature as a function of Rb coverage using ultraviolet photoelectron spectroscopy.At low O_(2) exposures,the intensity ratio of O^(2-)_(2) to O^(2-)increases with Rb coverage.The surfaces with low Rb coverages are mainly covered by Sb oxides,causing an increase of work function.For high Rb coverages,the Sb atoms are oxidized below a thin layer of Rb peroxide,which is related to an initial decrease of the work function.At high O_(2) exposures,the intensity of O^(-)_(2) ion increases with Rb coverage.
文摘We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110)surface.A GaSb(110)sample covered with 10 monolayers Ce was used to adsorb oxygen.When the exposure of O_(2) was up to 50L,the oxide of cerium,Ce_(2)O_(3),began to change into unstable CeO_(2).The dissociation of CeO_(2) resulted in strong oxidation of the substrate.The main products are Ga_(2)O_(3),Sb_(2)O_(3),and then Sb_(2)O_(5).After annealing,a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.
