A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^...A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.展开更多
A zero-pole cancellation transimpedance amplifier（TIA）has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-pole cancellation configuration to isolate the input pa...A zero-pole cancellation transimpedance amplifier（TIA）has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration.Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ωfor 1.5 pF photodiode capaci- tance,with a gain-bandwidth product of 3.4 THz·Ω.Even with 2 pF photodiode capacitance,the bandwidth exhibits a decline of only 300 MHz,confirming the mechanism of the zero-pole cancellation configuration.The input resis- tance is 50Ω,and the average input noise current spectral density is 9.7 pA/√ Hz.Testing results shows that the eye diagram at 1 Gb/s is wide open.The chip dissipates 17 mW under a single 3.3 V supply.展开更多
We present a high-speed visible light communication （VLC） link that uses a commercially available phos- phorescent white light-emitting diode （LED）. Such devices have few megahertz bandwidth due to the slow respon...We present a high-speed visible light communication （VLC） link that uses a commercially available phos- phorescent white light-emitting diode （LED）. Such devices have few megahertz bandwidth due to the slow response of phosphorescent component, which severely limit the transmission data rate of VLC system. We propose a simple pre-emphasis circuit. With blue-filtering and the pre-emphasis circuit, the bandwidth of VLC system can be enhanced from 3 to 77.6 MHz, which allows non-return-to-zero on-off-keying （NRZ- OOK） data transmission up to 200 Mb/s with the bit error ratio of 5.3 × 10-7 which is below 10-6. The VLC link operates at the room illumination level of -1000 lx at 1.1 m range using a single 1 W white LED.展开更多
Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optica...Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.展开更多
Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is de...Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.展开更多
A fully-differential bandpass CMOS （complementary metal oxide semiconductor） preamplifier for extra- cellular neural recording is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The pr...A fully-differential bandpass CMOS （complementary metal oxide semiconductor） preamplifier for extra- cellular neural recording is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The preamplifier has a midband gain of 20.4 dB and a DC gain of 0. The -3 dB upper cut-off frequency of the preamplifier is 6.7 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 8.2 μVrms integrated from 0.15 Hz to 6.7 kHz for recording the local field potentials and the mixed neural spikes with a power dissipation of 23.1μW from a 3.3 V supply. A bandgap reference circuitry is also designed for providing the biasing voltage and current. The 0.22 mm2 prototype chip, including the preamplifier and its biasing circuitry, is fabricated in the 0.35-μm N-well CMOS 2P4M process.展开更多
A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device...A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.展开更多
A 900 MHz fractional-N synthesizer is designed for the UHF transceiver. The VCO with a 4 bits capacitor bank covers 823–1061 MHz that implements 16（2^4）sub-bands. A 7/8 dual-modulus prescaler is implemented with a ...A 900 MHz fractional-N synthesizer is designed for the UHF transceiver. The VCO with a 4 bits capacitor bank covers 823–1061 MHz that implements 16（2^4）sub-bands. A 7/8 dual-modulus prescaler is implemented with a phase-switching circuit and high-speed flip–flops, which are composed of source coupled logic. The proposed synthesizer phase-locked loop is demonstrated with a 50 k Hz band width by a low 12.95 MHz reference clock, and offers a better phase noise and band width tradeoff. To reduce the out-band phase noise, a 4-levels 3-order single-loop sigma–delta modulator is applied. When its relative frequency resolution is settled to 10^-6, the testing results show that the phase noises are –120.6 dBc/Hz at 1 MHz and –95.0 dBc/Hz at 100 k Hz. The chip is2.1 mm^2 in UMC 0.18μm CMOS. The power is 36 m W at a 1.8 V supply.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金Supported by the State Key Programme of National Natural Science Foundation of China under Grant No 60536030, and the National High Technology Research and Development Programme of China under Grant No 2005AA311030.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60536030, 60776024, 60877035 and 90820002, the National High-Technology Research and Development Program of China under Grant Nos 2007AA04Z329 and 2007AA04Z254.
文摘A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.
基金supported by the National Natural Science Foundation of China(Nos.60536030,60502005)the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454)
文摘A zero-pole cancellation transimpedance amplifier（TIA）has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration.Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ωfor 1.5 pF photodiode capaci- tance,with a gain-bandwidth product of 3.4 THz·Ω.Even with 2 pF photodiode capacitance,the bandwidth exhibits a decline of only 300 MHz,confirming the mechanism of the zero-pole cancellation configuration.The input resis- tance is 50Ω,and the average input noise current spectral density is 9.7 pA/√ Hz.Testing results shows that the eye diagram at 1 Gb/s is wide open.The chip dissipates 17 mW under a single 3.3 V supply.
基金supported by the National "973" Program of China(Nos.2013CB329205 and 2011CBA00608)the National "863" Program of China(Nos.2013AA013602,2013AA013603,2013AA03A104,and 2013AA031903)the National Natural Science Foundation of China(Nos.61036002 and 61178051)
文摘We present a high-speed visible light communication （VLC） link that uses a commercially available phos- phorescent white light-emitting diode （LED）. Such devices have few megahertz bandwidth due to the slow response of phosphorescent component, which severely limit the transmission data rate of VLC system. We propose a simple pre-emphasis circuit. With blue-filtering and the pre-emphasis circuit, the bandwidth of VLC system can be enhanced from 3 to 77.6 MHz, which allows non-return-to-zero on-off-keying （NRZ- OOK） data transmission up to 200 Mb/s with the bit error ratio of 5.3 × 10-7 which is below 10-6. The VLC link operates at the room illumination level of -1000 lx at 1.1 m range using a single 1 W white LED.
基金supported by the National Basic Research Program of China(No.2011CBA00608)the National Natural Science Foundation of China(Nos.61178051,61321063,61335010,61178048,61275169)the National High Technology Research and Development Program of China(Nos.2013AA013602,2013AA031903,2013AA032204)
文摘Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
基金supported by the National Natural Science Foundation of China(Nos.61036002,60536030, 60776024,60877035,61076023,and 90820002)the National "863" Program of China(Nos.2007AA04Z329, 2007AA04Z254,2011CB933203,and 2011CB933102)
文摘Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.
基金supported by the National Natural Science Foundation of China(Nos.60776024,60877035,60976026,90820002)the National High Technology Research and Development Program of China(Nos.2007AA04Z329,2007AA04Z254).
文摘A fully-differential bandpass CMOS （complementary metal oxide semiconductor） preamplifier for extra- cellular neural recording is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The preamplifier has a midband gain of 20.4 dB and a DC gain of 0. The -3 dB upper cut-off frequency of the preamplifier is 6.7 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 8.2 μVrms integrated from 0.15 Hz to 6.7 kHz for recording the local field potentials and the mixed neural spikes with a power dissipation of 23.1μW from a 3.3 V supply. A bandgap reference circuitry is also designed for providing the biasing voltage and current. The 0.22 mm2 prototype chip, including the preamplifier and its biasing circuitry, is fabricated in the 0.35-μm N-well CMOS 2P4M process.
基金supported by the National Natural Science Foundation of China(Nos.60536030,60502005)the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454).
文摘A MOS-NDR（negative differential resistance） transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors（nMOSFETs） is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD（resonant tunneling diode） in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.
文摘A 900 MHz fractional-N synthesizer is designed for the UHF transceiver. The VCO with a 4 bits capacitor bank covers 823–1061 MHz that implements 16（2^4）sub-bands. A 7/8 dual-modulus prescaler is implemented with a phase-switching circuit and high-speed flip–flops, which are composed of source coupled logic. The proposed synthesizer phase-locked loop is demonstrated with a 50 k Hz band width by a low 12.95 MHz reference clock, and offers a better phase noise and band width tradeoff. To reduce the out-band phase noise, a 4-levels 3-order single-loop sigma–delta modulator is applied. When its relative frequency resolution is settled to 10^-6, the testing results show that the phase noises are –120.6 dBc/Hz at 1 MHz and –95.0 dBc/Hz at 100 k Hz. The chip is2.1 mm^2 in UMC 0.18μm CMOS. The power is 36 m W at a 1.8 V supply.
