Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si（100） substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricate...Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si（100） substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50588201 and 50672078.
文摘Bi1-xSmxFeO3 films with x= 0, 0.03, 0.05, 0.07 and 0.10 are prepared on LaNiO3/Si（100） substrates by the sol-gel method. X-ray diffraction patterns reveal that pure phase films with random orientations are fabricated. The results of SEM indicate that films with denser surfaces are obtained by Sm substitution. At the doping level of x=0.05, remnant polarization Pr increases to 3.19 μC/cm2 from 1.12 μC/cm2 of the un-substituted BiFeO3 film and shows enhanced ferroelectricity at room temperature. Because of the low leakage current density in the high electric field region, a polarization hysteresis loop with remanent polarization of 5.15 μC/cm2 is observed in the 0.10 Sm-substituted BiFeO3 films at the applied electric field of 226 kV/cm. Through the substitution of Sm, the leakage current density is reduced for the films with x= 0.07-0.10.
