The low internal quantum efficiency(IQE)of AlGaN-based deep ultraviolet light emitting diode(DUV-LED)limits its wider application.The main reasons for low IQE include low carrier concentration,poor carrier location an...The low internal quantum efficiency(IQE)of AlGaN-based deep ultraviolet light emitting diode(DUV-LED)limits its wider application.The main reasons for low IQE include low carrier concentration,poor carrier location and large defects.The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells.In this paper,we propose a gradual Al-composition p-type AlGaN(p-AlGaN)conduction layer to improve the light emitting properties of AlGaN-based DUV-LED.Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED.Consequently,the IQE of our optimazited DUV-LED is increased by 162%in comparison with conventional DUV-LEDs.展开更多
基金supported by the Key Research and Development Program of Shandong Province(Nos.2018GGX101027,2017GGX201002 and 2016GGX4101)the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University China(No.LH20157221)+1 种基金the Yantai“13th Five-Year”Marine Economic Innovation and Development Demonstration City Project(No.YHCXZB-L-201703)Fundamental Research Funds of Shandong University in China(Nos.2018WLJH87,2018JCG01 and 2017TB0021)。
文摘The low internal quantum efficiency(IQE)of AlGaN-based deep ultraviolet light emitting diode(DUV-LED)limits its wider application.The main reasons for low IQE include low carrier concentration,poor carrier location and large defects.The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells.In this paper,we propose a gradual Al-composition p-type AlGaN(p-AlGaN)conduction layer to improve the light emitting properties of AlGaN-based DUV-LED.Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED.Consequently,the IQE of our optimazited DUV-LED is increased by 162%in comparison with conventional DUV-LEDs.
