Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interco...Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si(001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.展开更多
基金This research was supported by the National Natural Science Foundation of China(No.62174144)Shenzhen Fundamental Research Fund(Nos.JCYJ20210324115605016 and JCYJ20210324120204011)+7 种基金Optical Communication Core Chip Research Platform,Shenzhen Key Laboratory Project(No.ZDSYS201603311644527)Longgang Key Laboratory Project(Nos.ZSYS2017003 and LGKCZSYS2018000015)Longgang Matching Support Fund(Nos.CXPTPT-2017-YJ-002 and 201617486)President's Fund(PF01000154)UK Engineering and Physical Sciences Research Council(EP/P006973/1 and National Epitaxy Facility)European project H2020-ICT-PICTURE(780930)Royal Academy of Engineering(RF201617/16/28)French government managed by ANR under the Investissements davenir ANR-10-IRT-05 and ANR-15-IDEX-02 and French RENATECH network.
文摘Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si(001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.
