在弹药供应保障中要重点依托信息化技术,寻找能够有效解决弹药供应保障过程中出现各种问题的策略,建立合理的弹药供应保障指挥体系,为切实提高我军的弹药供应保障能力奠定基础。基于品质功能配置法(Quality Function Deployment,QFD)对...在弹药供应保障中要重点依托信息化技术,寻找能够有效解决弹药供应保障过程中出现各种问题的策略,建立合理的弹药供应保障指挥体系,为切实提高我军的弹药供应保障能力奠定基础。基于品质功能配置法(Quality Function Deployment,QFD)对弹药供应保障的设施需求进行了分析,较之传统的侧重于经验累积和主观推理的需求分析方法,可以更好地满足高寒山地条件下的弹药供应保障设施需求。展开更多
Considering the impacts of ideal factor n, V_(BE) and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the a...Considering the impacts of ideal factor n, V_(BE) and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature–humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.展开更多
According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simulat...According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simulates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall's tau,those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime.展开更多
NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperatur...NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature–humidity constant stresses,the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg–Peck temperature–humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105–107h. According to its definition, the accelerating factor is 1462 in 100 C/100% relative humidity(RH) stress condition, and 25 C/25% RH stress condition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.展开更多
<正>Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object,the test of accelerating life is conducted in constant temperature and humidity,and then the data are st...<正>Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object,the test of accelerating life is conducted in constant temperature and humidity,and then the data are statistically analyzed with software developed by ourselves.According to degradations of such sensitive parameters as the reverse leakage current of transistors,the lifetime order of transistors is about more than 10~4 at 100℃and 100% relative humidity(RH) conditions.By corrosion fracture of transistor outer leads and other failure modes,with the failure truncated testing,the average lifetime rank of transistors in different distributions is extrapolated about 10~3. Failure mechanism analyses of degradation of electrical parameters,outer lead fracture and other reasons that affect transistor lifetime are conducted.The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.展开更多
文摘在弹药供应保障中要重点依托信息化技术,寻找能够有效解决弹药供应保障过程中出现各种问题的策略,建立合理的弹药供应保障指挥体系,为切实提高我军的弹药供应保障能力奠定基础。基于品质功能配置法(Quality Function Deployment,QFD)对弹药供应保障的设施需求进行了分析,较之传统的侧重于经验累积和主观推理的需求分析方法,可以更好地满足高寒山地条件下的弹药供应保障设施需求。
文摘Considering the impacts of ideal factor n, V_(BE) and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature–humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.
文摘According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simulates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall's tau,those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime.
文摘NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature–humidity constant stresses,the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg–Peck temperature–humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105–107h. According to its definition, the accelerating factor is 1462 in 100 C/100% relative humidity(RH) stress condition, and 25 C/25% RH stress condition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.
文摘<正>Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object,the test of accelerating life is conducted in constant temperature and humidity,and then the data are statistically analyzed with software developed by ourselves.According to degradations of such sensitive parameters as the reverse leakage current of transistors,the lifetime order of transistors is about more than 10~4 at 100℃and 100% relative humidity(RH) conditions.By corrosion fracture of transistor outer leads and other failure modes,with the failure truncated testing,the average lifetime rank of transistors in different distributions is extrapolated about 10~3. Failure mechanism analyses of degradation of electrical parameters,outer lead fracture and other reasons that affect transistor lifetime are conducted.The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation.
