设计了一个基于SOC系统的触摸屏逐次逼近型结构的10 bit 2Msps模数转换器(ADC)。高精度比较器和Bootstrap开关应用于设计电路中,提高了芯片速度和降低了功耗。芯片采用SMIC0.18μm 1P6M CMOS工艺流片,版图面积为0.25mm2,2MHz工作时平均...设计了一个基于SOC系统的触摸屏逐次逼近型结构的10 bit 2Msps模数转换器(ADC)。高精度比较器和Bootstrap开关应用于设计电路中,提高了芯片速度和降低了功耗。芯片采用SMIC0.18μm 1P6M CMOS工艺流片,版图面积为0.25mm2,2MHz工作时平均功耗为3.1mW。输入频率320kHz时,信噪比(SNR)为56dB,ENOB为9.05bit,无杂散动态范围(SFDR)为66.56dB,微分非线性(DNL)为0.8LSB,积分非线性(INL)为1.4LSB。展开更多
A novel low-voltage,low constant-impedance switch is proposed, which not only eliminates the parasitic capacitor but also reduces the variation of switch ＂on＂ resistance. With the gain-boost technology,the operation...A novel low-voltage,low constant-impedance switch is proposed, which not only eliminates the parasitic capacitor but also reduces the variation of switch ＂on＂ resistance. With the gain-boost technology,the operational transconductance amplifier used in this analog-to-digital converter （ADC） achieves enough DC gain and unity-gain frequency under the low voltage supply and to guarantee the performance of the sample and hold circuit （S/H） and the sub-stages. Based on these methods,a 10bit 100Msps pipelined ADC is fabricated in a 0. 18μm CMOS process and operates under a 1.8V voltage supply. The ADC achieves an SNR of 54. 2dB （input frequency of 6.26MHz） and an SNR of 49. 8dB （input frequency of 48. 96MHz） when the sampling frequency is 100MHz.展开更多
在增益增强型运算放大器优化中采用了自动设计方法,此方法在电路性能方程式和自适应遗传优化算法基础上对电路性能指标进行优化。该放大器在0.18μm CM O S工艺条件下中开环增益为92.1 dB,单位增益带宽积为1.78 GH z,相位裕度为55.1...在增益增强型运算放大器优化中采用了自动设计方法,此方法在电路性能方程式和自适应遗传优化算法基础上对电路性能指标进行优化。该放大器在0.18μm CM O S工艺条件下中开环增益为92.1 dB,单位增益带宽积为1.78 GH z,相位裕度为55.1°和0.2%建立时间为1.27 ns,同时说明此优化设计方法的有效性。展开更多
Comparator offset cancellation and capacitor self-calibration techniques used in a successive approximation analog-to-digital converter （SA-ADC） are described. The calibration circuit works in parallel with the SAAD...Comparator offset cancellation and capacitor self-calibration techniques used in a successive approximation analog-to-digital converter （SA-ADC） are described. The calibration circuit works in parallel with the SAADC by adding additional calibration clock cycles to pursue high accuracy and low power consumption, and the calibrated resolution can be up to 14bit. This circuit is used in a 10bit 3Msps successive approximation ADC. This chip is realized with an SMIC 0. 18μm 1.8V process and occupies 0.25mm^2 . It consumes 3. 1mW when operating at 1.8MHz. The measured SINAD is 55. 9068dB, SFDR is 64. 5767dB, and THD is - 74. 8889dB when sampling a 320kHz sine wave.展开更多
文摘设计了一个基于SOC系统的触摸屏逐次逼近型结构的10 bit 2Msps模数转换器(ADC)。高精度比较器和Bootstrap开关应用于设计电路中,提高了芯片速度和降低了功耗。芯片采用SMIC0.18μm 1P6M CMOS工艺流片,版图面积为0.25mm2,2MHz工作时平均功耗为3.1mW。输入频率320kHz时,信噪比(SNR)为56dB,ENOB为9.05bit,无杂散动态范围(SFDR)为66.56dB,微分非线性(DNL)为0.8LSB,积分非线性(INL)为1.4LSB。
文摘A novel low-voltage,low constant-impedance switch is proposed, which not only eliminates the parasitic capacitor but also reduces the variation of switch ＂on＂ resistance. With the gain-boost technology,the operational transconductance amplifier used in this analog-to-digital converter （ADC） achieves enough DC gain and unity-gain frequency under the low voltage supply and to guarantee the performance of the sample and hold circuit （S/H） and the sub-stages. Based on these methods,a 10bit 100Msps pipelined ADC is fabricated in a 0. 18μm CMOS process and operates under a 1.8V voltage supply. The ADC achieves an SNR of 54. 2dB （input frequency of 6.26MHz） and an SNR of 49. 8dB （input frequency of 48. 96MHz） when the sampling frequency is 100MHz.
文摘在增益增强型运算放大器优化中采用了自动设计方法,此方法在电路性能方程式和自适应遗传优化算法基础上对电路性能指标进行优化。该放大器在0.18μm CM O S工艺条件下中开环增益为92.1 dB,单位增益带宽积为1.78 GH z,相位裕度为55.1°和0.2%建立时间为1.27 ns,同时说明此优化设计方法的有效性。
文摘Comparator offset cancellation and capacitor self-calibration techniques used in a successive approximation analog-to-digital converter （SA-ADC） are described. The calibration circuit works in parallel with the SAADC by adding additional calibration clock cycles to pursue high accuracy and low power consumption, and the calibrated resolution can be up to 14bit. This circuit is used in a 10bit 3Msps successive approximation ADC. This chip is realized with an SMIC 0. 18μm 1.8V process and occupies 0.25mm^2 . It consumes 3. 1mW when operating at 1.8MHz. The measured SINAD is 55. 9068dB, SFDR is 64. 5767dB, and THD is - 74. 8889dB when sampling a 320kHz sine wave.
