By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic, thermal, and thermoelectric properties of four kinds of bases in DNA perpendicularly c...By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic, thermal, and thermoelectric properties of four kinds of bases in DNA perpendicularly coupling between two ZGNR electrodes. The results show that the electron transport is highly sensitive to different base-ZGNR coupling geometries, and the system can present large rectifying and negative differential resistance effects. Moreover, the fluctuations of electronic transmission and super-low thermal conductance result in significant enhancement of the thermoelectric figure of merit (ZT): the ZT will be over 1.4 at room temperature, and over 1.6 at 200 K. The results show that the base-ZGNR coupling devices can present large rectifying, negative differential resistance, and enhanced thermoelectric effects.展开更多
Thermal transport properties are investigated for out-of-plane phonon modes （FPMs） and it-plane phonon modes （IPMs） in double-stub graphene nanoribbons （GNRs）. The results show that the quantized thermal conduct...Thermal transport properties are investigated for out-of-plane phonon modes （FPMs） and it-plane phonon modes （IPMs） in double-stub graphene nanoribbons （GNRs）. The results show that the quantized thermal conductance plateau of FPMs is narrower and more easily broken by the double-stub structure. In the straight GNRs, the thermal conductance of FPMs is higher in the low temperature region due to there being less cut-off frequency and more low-frequency excited modes. In contrast, the thermal conductance of IPMs is higher in the high temperature region becau~,＇.e of the wider phonon energy spectrum. Furthermore, the thermal transport of two types of phonon modes can be modulated by the double-stub GNRs, the thermal conductance of FPMs is less than that of IPMs in the low temperatures, but it dominates the contribution to the total thermal conductance in the high temperatures. The modulated thermal conclu~＇tanc：e can provide a guideline for designing high-performance thermal or thermoelectric nanodevices based on graphene.展开更多
Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZM...Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.展开更多
We have investigated the electronic and magnetic properties of zigzag phosphorene nanoribbons(ZPNRs)with transition metal(TM)passivated atoms,it can be found that the ZPNRs with TM passivated atoms exhibit different m...We have investigated the electronic and magnetic properties of zigzag phosphorene nanoribbons(ZPNRs)with transition metal(TM)passivated atoms,it can be found that the ZPNRs with TM passivated atoms exhibit different magnetisms except for the Ni-passivated system.Meanwhile,the results show that the magnetic moments of ZPNRs with TM passivated atoms are larger than that of ZPNRs with other passivated non-metals/groups.Interestingly,it can be found that Fe-passivated ZPNR exhibits magnetic semiconducting character,which provides the possbility for the application of phosphorene in information storage.For Mn-passivated ZPNRs,it exhibits the half-metallicity.These results may be useful for potential applications of phosphorene in electronic and high-performance spintronic devices.展开更多
The diamond nanothread(DNT), a new one-dimensional(1 D) full carbon sp3 structure that has been successfully synthesized recently, has attracted widespread attention in the carbon community. By using the first-princip...The diamond nanothread(DNT), a new one-dimensional(1 D) full carbon sp3 structure that has been successfully synthesized recently, has attracted widespread attention in the carbon community. By using the first-principles calculation method of density functional theory(DFT), we have studied the effects of 3 d transition metal(TM) atomic doping on the electronic and magnetic properties of DNT. The results show that the spin-polarized semiconductor characteristics are achieved by doping Sc, V, Cr, Mn, and Co atoms in the DNT system. The magnetic moment ranges from 1.00 μB to 3.00 μB and the band gap value is from 0.35 e V to 2.54 e V. The Fe-doped DNT system exhibits spin-metallic state with a magnetic moment of 2.58 μB, while the Ti and Ni-doped DNT systems are nonmagnetic semiconductors. These results indicate that the 3 d TM atoms doping can modulate the electronic and magnetic properties of 1 D-DNT effectively, and the TM-doped DNT systems have potential applications in the fields of electronics, optoelectronics, and spintronics.展开更多
In this article, the spin-dependent electronic and transport properties of the armchair boron–phosphorous nanoribbons（ABPNRs） are mainly studied by using the non-equilibrium Green function method combined with the ...In this article, the spin-dependent electronic and transport properties of the armchair boron–phosphorous nanoribbons（ABPNRs） are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spinfiltering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.展开更多
Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non- equilibrium Green＇s Function method in combination with density functional theory, we investigate the infl...Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non- equilibrium Green＇s Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.展开更多
By using density functional theory combined with a nonequilibrium Green's functions approach,the electronic transport properties of different bridges connecting benzene-based heterojunction molecular devices are i...By using density functional theory combined with a nonequilibrium Green's functions approach,the electronic transport properties of different bridges connecting benzene-based heterojunction molecular devices are investigated.We focus on the effects of the bridging bond polarity and its bond length.Our results show that the polar bond plays a significant role in determining the overall conductance of the molecular devices.The effects of a current plateau and the negative differential resistance can be observed.These simulation results suggest that the proposed models may be helpful for designing practical molecular devices.展开更多
Stacking-dependent magnetism in van der Waals materials has caught intense interests.Based on the first principle calculations,we investigate the coupling between stacking orders and interlayer magnetic orders in bila...Stacking-dependent magnetism in van der Waals materials has caught intense interests.Based on the first principle calculations,we investigate the coupling between stacking orders and interlayer magnetic orders in bilayer H-VSe 2.It is found that there are two stable stacking orders in bilayer H-VSe 2,named AB-stacking and A′B-stacking.Under standard DFT framework,the A′B-stacking prefers the interlayer AFM order and is semiconductive,whereas the AB-stacking prefers the FM order and is metallic.However,under the DFT+U framework both the stacking orders prefer the interlayer AFM order and are semiconductive.By detailedly analyzing this difference,we find that the interlayer magnetism originates from the competition between antiferromagnetic interlayer super-superexchange and ferromagnetic interlayer double exchange,in which both the interlayer Se-4 p z orbitals play a crucial role.In the DFT+U calculations,the double exchange is suppressed due to the opened bandgap,such that the interlayer magnetic orders are decoupled with the stacking orders.Based on this competition mechanism,we propose that a moderate hole doping can significantly enhance the interlayer double exchange,and can be used to switch the interlayer magnetic orders in bilayer VSe 2.This method is also applicable to a wide range of semiconductive van der Waals magnets.展开更多
By employing non-equilibrium Green＇s function combined with the spin-polarized density-functional theory, we investigate the spin-dependent electronic transport properties of armchair arsenene nanoribbons（a As NRs）...By employing non-equilibrium Green＇s function combined with the spin-polarized density-functional theory, we investigate the spin-dependent electronic transport properties of armchair arsenene nanoribbons（a As NRs）. Our results show that the spin-metal and spin-semiconductor properties can be observed in a As NRs with different widths. We also find that there is nearly 100% bipolar spin-filtering behavior in the a As NR-based device with antiparallel spin configuration. Moreover, rectifying behavior and giant magnetoresistance are found in the device. The corresponding physical analyses have been given.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11704417 and 11247030)the Natural Science Foundation of Hunan Province,China(Grant No.2019JJ40532)the Talent Introducing Foundation of Central South University of Forestry and Technology(Grant No.1040160).
文摘By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic, thermal, and thermoelectric properties of four kinds of bases in DNA perpendicularly coupling between two ZGNR electrodes. The results show that the electron transport is highly sensitive to different base-ZGNR coupling geometries, and the system can present large rectifying and negative differential resistance effects. Moreover, the fluctuations of electronic transmission and super-low thermal conductance result in significant enhancement of the thermoelectric figure of merit (ZT): the ZT will be over 1.4 at room temperature, and over 1.6 at 200 K. The results show that the base-ZGNR coupling devices can present large rectifying, negative differential resistance, and enhanced thermoelectric effects.
基金Project supported by the Science Funds from the Educational Bureau of Hunan Province,China(Grant No.16C0468)the China Postdoctoral Science Foundation(Grant No.2016M602421)+1 种基金the Science and Technology Plan of Hunan Province,China(Grant No.2015RS4002)the Natural Science Foundation of Hunan Province,China(Grant No.2015JJ2050)
文摘Thermal transport properties are investigated for out-of-plane phonon modes （FPMs） and it-plane phonon modes （IPMs） in double-stub graphene nanoribbons （GNRs）. The results show that the quantized thermal conductance plateau of FPMs is narrower and more easily broken by the double-stub structure. In the straight GNRs, the thermal conductance of FPMs is higher in the low temperature region due to there being less cut-off frequency and more low-frequency excited modes. In contrast, the thermal conductance of IPMs is higher in the high temperature region becau~,＇.e of the wider phonon energy spectrum. Furthermore, the thermal transport of two types of phonon modes can be modulated by the double-stub GNRs, the thermal conductance of FPMs is less than that of IPMs in the low temperatures, but it dominates the contribution to the total thermal conductance in the high temperatures. The modulated thermal conclu~＇tanc：e can provide a guideline for designing high-performance thermal or thermoelectric nanodevices based on graphene.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.21103232,51272291,and 11174371)
文摘Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.11564008)the Natural Science Foundation of Guangxi Zhuang Autonomous Region,China(Grant No.2017GXNSFAA198195)the Shanghai Supercomputer Center。
文摘We have investigated the electronic and magnetic properties of zigzag phosphorene nanoribbons(ZPNRs)with transition metal(TM)passivated atoms,it can be found that the ZPNRs with TM passivated atoms exhibit different magnetisms except for the Ni-passivated system.Meanwhile,the results show that the magnetic moments of ZPNRs with TM passivated atoms are larger than that of ZPNRs with other passivated non-metals/groups.Interestingly,it can be found that Fe-passivated ZPNR exhibits magnetic semiconducting character,which provides the possbility for the application of phosphorene in information storage.For Mn-passivated ZPNRs,it exhibits the half-metallicity.These results may be useful for potential applications of phosphorene in electronic and high-performance spintronic devices.
基金National Natural Science Foundation of China(Grant Nos.21673296 and 11664038)the Natural Science Foundation of Xinjiang Uygur Autonomous Region of China(Grant No.2019D01C038).
文摘The diamond nanothread(DNT), a new one-dimensional(1 D) full carbon sp3 structure that has been successfully synthesized recently, has attracted widespread attention in the carbon community. By using the first-principles calculation method of density functional theory(DFT), we have studied the effects of 3 d transition metal(TM) atomic doping on the electronic and magnetic properties of DNT. The results show that the spin-polarized semiconductor characteristics are achieved by doping Sc, V, Cr, Mn, and Co atoms in the DNT system. The magnetic moment ranges from 1.00 μB to 3.00 μB and the band gap value is from 0.35 e V to 2.54 e V. The Fe-doped DNT system exhibits spin-metallic state with a magnetic moment of 2.58 μB, while the Ti and Ni-doped DNT systems are nonmagnetic semiconductors. These results indicate that the 3 d TM atoms doping can modulate the electronic and magnetic properties of 1 D-DNT effectively, and the TM-doped DNT systems have potential applications in the fields of electronics, optoelectronics, and spintronics.
基金Project supported by the National Natural Science Foundation of China(Grant No.21673296)the Hunan Provincial Natural Science Foundation of China(Grant No.2018JJ2481)the Fundamental Research Funds for the Central Universities of Central South University,China(Grant No.2018zzts328)
文摘In this article, the spin-dependent electronic and transport properties of the armchair boron–phosphorous nanoribbons（ABPNRs） are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spinfiltering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.
基金Supported by the National Natural Science Foundation of China under Grant No 21673296the Science and technology Plan of Hunan Province under Grant No 2015RS4002the Hunan Provincial Natural Science Foundation under Grant No 2017JJ3063
文摘Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non- equilibrium Green＇s Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.
基金Supported by the National Natural Science Foundation of China under Grant No 21103232High Performance Computing Center of CSU.
文摘By using density functional theory combined with a nonequilibrium Green's functions approach,the electronic transport properties of different bridges connecting benzene-based heterojunction molecular devices are investigated.We focus on the effects of the bridging bond polarity and its bond length.Our results show that the polar bond plays a significant role in determining the overall conductance of the molecular devices.The effects of a current plateau and the negative differential resistance can be observed.These simulation results suggest that the proposed models may be helpful for designing practical molecular devices.
基金Supported by the National Natural Science Foundation of China(Grant No.51272291)the Distinguished Young Scholar Foundation of Hunan Province(Grant No.2015JJ1020)+3 种基金the Young Scholar Foundation of Hunan Province(Grant No.2016JJ3142)the Central South University Research Fund for Sheng-Hua ScholarsCentral South University State Key Laboratory of Powder Metallurgythe Fundamental Research Funds for the Central Universities of Central South University
文摘Stacking-dependent magnetism in van der Waals materials has caught intense interests.Based on the first principle calculations,we investigate the coupling between stacking orders and interlayer magnetic orders in bilayer H-VSe 2.It is found that there are two stable stacking orders in bilayer H-VSe 2,named AB-stacking and A′B-stacking.Under standard DFT framework,the A′B-stacking prefers the interlayer AFM order and is semiconductive,whereas the AB-stacking prefers the FM order and is metallic.However,under the DFT+U framework both the stacking orders prefer the interlayer AFM order and are semiconductive.By detailedly analyzing this difference,we find that the interlayer magnetism originates from the competition between antiferromagnetic interlayer super-superexchange and ferromagnetic interlayer double exchange,in which both the interlayer Se-4 p z orbitals play a crucial role.In the DFT+U calculations,the double exchange is suppressed due to the opened bandgap,such that the interlayer magnetic orders are decoupled with the stacking orders.Based on this competition mechanism,we propose that a moderate hole doping can significantly enhance the interlayer double exchange,and can be used to switch the interlayer magnetic orders in bilayer VSe 2.This method is also applicable to a wide range of semiconductive van der Waals magnets.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.21673296 and 11334014)the Science and Technology Plan of Hunan Province,China(Grant No.2015RS4002)the Postdoctoral Science Foundation of Central South University,China
文摘By employing non-equilibrium Green＇s function combined with the spin-polarized density-functional theory, we investigate the spin-dependent electronic transport properties of armchair arsenene nanoribbons（a As NRs）. Our results show that the spin-metal and spin-semiconductor properties can be observed in a As NRs with different widths. We also find that there is nearly 100% bipolar spin-filtering behavior in the a As NR-based device with antiparallel spin configuration. Moreover, rectifying behavior and giant magnetoresistance are found in the device. The corresponding physical analyses have been given.
基金supported by the National Natural Science Foundation of China(52072411,51932011)the Natural Science Foundation of Hunan Province(2021JJ20060)the Fundamental Research Funds for the Central Universities of Central South University(2021zzts0093)。
