A nano-channel array(NCA)structure is applied to realize enhancement-mode(E-mode)AlGaN/GaN high-electron mobility transistors(HEMTs).The fabricated NCA-HEMT,consisting of 1000 channels connected in parallel with a cha...A nano-channel array(NCA)structure is applied to realize enhancement-mode(E-mode)AlGaN/GaN high-electron mobility transistors(HEMTs).The fabricated NCA-HEMT,consisting of 1000 channels connected in parallel with a channel width of 64 nm,shows a threshold voltage of 0.15 V and a subthreshold slope of 78 mV/dec,compared to−3.92 V and 99 mV/dec for a conventional HEMT(C-HEMT),respectively.Both the NCA-HEMT and C-HEMT show similar gate leakage current,indicating no significant degradation in gate leakage characteristics for the NCA-HEMT.The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift,while the work function difference makes it positive.展开更多
基金by the National Basic Research Program of China under Grant No G2009CB929300.
文摘A nano-channel array(NCA)structure is applied to realize enhancement-mode(E-mode)AlGaN/GaN high-electron mobility transistors(HEMTs).The fabricated NCA-HEMT,consisting of 1000 channels connected in parallel with a channel width of 64 nm,shows a threshold voltage of 0.15 V and a subthreshold slope of 78 mV/dec,compared to−3.92 V and 99 mV/dec for a conventional HEMT(C-HEMT),respectively.Both the NCA-HEMT and C-HEMT show similar gate leakage current,indicating no significant degradation in gate leakage characteristics for the NCA-HEMT.The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift,while the work function difference makes it positive.
