In this paper, a quantum cascade photodetector based on intersubband transitions in quantum wells with ability of detecting 1.33 μm and 1.55 μm wavelengths in two individual current paths is introduced. Multi quantu...In this paper, a quantum cascade photodetector based on intersubband transitions in quantum wells with ability of detecting 1.33 μm and 1.55 μm wavelengths in two individual current paths is introduced. Multi quantum wells structures based on III-Nitride materials due to their large band gaps are used. In order to calculate the photodetector parameters, wave functions and energy levels are obtained by solving 1-D Schrodinger–Poisson equation self consistently at 80 ?K. Responsivity values are about 22 mA/W and 18.75 mA/W for detecting of 1.33 μm and 1.55 μm wavelengths, respectively. Detectivity values are calculated as 1.17 × 107 (Jones) and 2.41 × 107 (Jones) at wavelengths of 1.33 μm and 1.55 μm wavelengths, respectively.展开更多
We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the ...We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities （14 times in the quadratic electro-optic effect, 31 times for ω = ω0/3 and 14 times for ω = ω0 in the third harmonic generation）. The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.展开更多
文摘In this paper, a quantum cascade photodetector based on intersubband transitions in quantum wells with ability of detecting 1.33 μm and 1.55 μm wavelengths in two individual current paths is introduced. Multi quantum wells structures based on III-Nitride materials due to their large band gaps are used. In order to calculate the photodetector parameters, wave functions and energy levels are obtained by solving 1-D Schrodinger–Poisson equation self consistently at 80 ?K. Responsivity values are about 22 mA/W and 18.75 mA/W for detecting of 1.33 μm and 1.55 μm wavelengths, respectively. Detectivity values are calculated as 1.17 × 107 (Jones) and 2.41 × 107 (Jones) at wavelengths of 1.33 μm and 1.55 μm wavelengths, respectively.
文摘We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities （14 times in the quadratic electro-optic effect, 31 times for ω = ω0/3 and 14 times for ω = ω0 in the third harmonic generation）. The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.
