The Schottky contact characteristics of Cr on n-and p-type 6H-SiC have been investigated by using I-V and C-V methods,and the barrier heights and ideality factors have been measured.Results obtained show that Cr is al...The Schottky contact characteristics of Cr on n-and p-type 6H-SiC have been investigated by using I-V and C-V methods,and the barrier heights and ideality factors have been measured.Results obtained show that Cr is also an appropriate metal to form Schottky junction on n type 6H-SiC,as the barrier height of~1 eV is moderate for both low forward turn on voltage and low backward leakage current in device applications.However,the interfacial properties of Cr to p type 6H-SiC results in nonideal Schottky junctions.展开更多
文摘The Schottky contact characteristics of Cr on n-and p-type 6H-SiC have been investigated by using I-V and C-V methods,and the barrier heights and ideality factors have been measured.Results obtained show that Cr is also an appropriate metal to form Schottky junction on n type 6H-SiC,as the barrier height of~1 eV is moderate for both low forward turn on voltage and low backward leakage current in device applications.However,the interfacial properties of Cr to p type 6H-SiC results in nonideal Schottky junctions.
