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根据Lg波Q值反演得到的Hi-CLIMB项目西藏剖面地震衰减特征 被引量:1
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作者 C.Singh M.Shekar +4 位作者 a.singh R.K.Chadha 张尧(译) 徐沁(校) 吕春来(复校) 《世界地震译丛》 2012年第5期12-19,共8页
利用可靠的双台站法研究了喜马拉雅—青藏大陆岩石层造山(Hi-CLIMB)项目西藏剖面的地壳Lg波的Q值。使用沿800km长的密间距的地震剖面记录的4次M≥5.5地震提取Lg波波谱。从2369种可能的配对中挑选出107对高质量的台站间的路径,使我们能... 利用可靠的双台站法研究了喜马拉雅—青藏大陆岩石层造山(Hi-CLIMB)项目西藏剖面的地壳Lg波的Q值。使用沿800km长的密间距的地震剖面记录的4次M≥5.5地震提取Lg波波谱。从2369种可能的配对中挑选出107对高质量的台站间的路径,使我们能够使用标准的双台站法进行Lg波Q值的测量。通过将这107个高质量台站间的Q0(1Hz的Lg波Q)值用做输入,由反演得出衰减特征的横向变化。该地区Q0的估计值范围是从88±5到165±15,羌塘地体的值最低,喜马拉雅山脉较低区域一些地方的值最高。最低值被认为是高泊松比、更高温度以及地壳部分熔融引起的。这些结果不含有任何可检测到的Q0值变化,不论在喜马拉雅—西藏碰撞带(即印度河—雅鲁藏布江缝合带)还是在大班公—怒江缝合带(BNSZ)都是如此。沿喜马拉雅地震探测项目剖面的一致低Q0值证明整个高原的地壳普遍存在部分熔融现象。 展开更多
关键词 剖面记录 地震探测 衰减特征 LG波 Q值 西藏 反演 喜马拉雅山脉
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InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region
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作者 P.K.Maurya H.Agarwal +1 位作者 a.singh P.Chakrabarti 《Optoelectronics Letters》 EI 2008年第5期342-346,共5页
A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical char... A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N+ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain,excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process. The LWIR APD is expected to find application in optical gas sensor and in future generation of optical communication system. 展开更多
关键词 长波长 紫外线区域 雪崩二极管 数字模型
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Renal Toxicity of Nickel,Sodium Lauryl Sulphate and Their Combination after Dermal Application in Guinea Pigs
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作者 A.K.MATHUR B.N.GUPTA +2 位作者 a.singh S.SINGH RAVISHANKER 《Biomedical and Environmental Sciences》 SCIE CAS CSCD 1993年第3期231-236,共6页
The guinea pigs were dermally exposed to nickel (Ni), sodium lauryl sulphate (SLS) and in their combination for 7 and 14 days. The exposure to Ni and SLS produced changes in enzymes and lipid peroxidation in kidney. T... The guinea pigs were dermally exposed to nickel (Ni), sodium lauryl sulphate (SLS) and in their combination for 7 and 14 days. The exposure to Ni and SLS produced changes in enzymes and lipid peroxidation in kidney. The exposure to Ni or SLS depicted slight changes while combined exposure to Ni plus SLS exhibited more degenerative changes in kidney. The result of the study suggests that industrial workers and/or populations exposed simultaneously to Ni and SLS produces more damage to kidney. 展开更多
关键词 SLS Ni Renal Toxicity of Nickel Sodium Lauryl Sulphate and Their Combination after Dermal Application in Guinea Pigs
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Dermal Toxicity of Paraphenylenediamine
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作者 A.K.MATHUR B.N.GUPTA +2 位作者 S.SINGH a.singh S.NARANG 《Biomedical and Environmental Sciences》 SCIE CAS CSCD 1992年第4期321-324,共4页
The guinea pigs were dermally exposed to paraphenylenediamine (PPD) and in presence of an oxidising agent hydrogen peroxide for 15 and 30 d to assess their effects on some enzymes, lipid peroxidation and histamine con... The guinea pigs were dermally exposed to paraphenylenediamine (PPD) and in presence of an oxidising agent hydrogen peroxide for 15 and 30 d to assess their effects on some enzymes, lipid peroxidation and histamine contents in the skin. The activities of acid and alkaline phosphatases, β-glucuronidase, gamma glutamyl transpeptidase, histidase and tyrosinase were enhanced after application of either PPD or PPD plus hydrogen peroxide. The lipid peroxidation and histamine contents also showed marked elevation following exposure to the chemicals. 展开更多
关键词 PPD Dermal Toxicity of Paraphenylenediamine
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精米的蛋白质含量和抛光度间的相关关系
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作者 a.singh 邱敦莲 《国外作物育种》 2002年第5期3-4,共2页
关键词 水稻 稻米 精米 蛋白质含量 抛光度间 相关关系
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Competition between axial anomaly and ferromagnetic ordering in Bi_(2-x)Fe_(x)Se_(3-x)S_(x) topological insulator:A study of magnetic and magnetotransport properties
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作者 Rahul Singh Shiv Kumar +10 位作者 A.Jain Mahima Singh Labanya Ghosh a.singh Soma Banik A.Lakhani S.Patil E.F.Schwier K.Shimada S.M.Yusuf Sandip Chatterjee 《Journal of Materiomics》 SCIE 2022年第3期669-677,共9页
The topological insulators Bi_(2-x)Fe_(x)Se_(3-x)S_(x) have been investigated by the dc-magnetization,magnetotransport and angle resolved photoemission spectroscopy(ARPES)techniques.With doping of Fe and S,a negative ... The topological insulators Bi_(2-x)Fe_(x)Se_(3-x)S_(x) have been investigated by the dc-magnetization,magnetotransport and angle resolved photoemission spectroscopy(ARPES)techniques.With doping of Fe and S,a negative giant magneto-resistance(MR)is observed for parallel electric and magnetic fields(H||E).The MR behavior at lower magnetic field can be explained with the semi-classical theory whereas the MR behavior at higher field has been attributed to the axial anomaly.Interestingly,the system reached to the quantum limit at low magnetic field(~4.5T).The magnetic ordering can be explained with the presence of both the RKKY(surface)and van-Vleck(bulk)interaction.The ARPES study reveals that a surface gap is suppressed when the magnetic ordering changes from ferromagnetic to anti-ferromagnetic ordering.The ARPES study and the appearance of quantum oscillations(SdH)in the resistivity pattern reveal that the topological surface property is preserved with the co-doping of Fe and S. 展开更多
关键词 SPINTRONICS MAGNETORESISTANCE MAGNETISM Topological insulators RKKY interaction ARPES study
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Effect of various physical properties on the reflection coefficients of inhomogeneous waves at the stress-free surface of partially saturated soils induced by obliquely incident fast P-wave
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作者 M.Kumari M.S.Barak +1 位作者 a.singh M.Kumar 《Journal of Ocean Engineering and Science》 SCIE 2022年第3期225-236,共12页
Ghasemzadeh and Abounouri[1]developed a mathematical model of partially saturated soils that is solved using the potential method,which decomposes elastodynamics equations into two standard wave equations,a scalar wav... Ghasemzadeh and Abounouri[1]developed a mathematical model of partially saturated soils that is solved using the potential method,which decomposes elastodynamics equations into two standard wave equations,a scalar wave equation for scalar potential and a vector wave equation for vector potential.In such a medium,four waves exist three longitudinal and one shear.Each fluid phase tortuous path is taken into account in this model.The inertial coupling between solid and fluid particles is consid-ered.Furthermore,both open-pore and sealed-pore boundaries are explored to investigate the reflection phenomenon at the surface of partially saturated soils.For both boundaries,the reflection coefficients of inhomogeneous waves at a partially saturated soil surface are found as a non-singular set of linear equations.All waves(both reflected and incident)in partially saturated soils are pronounced as inhomogeneous due to viscosity in pore fluids(i.e.,distinct directions of attenuation and propagation).The energy shares of reflected waves are determined using an energy matrix.A numerical example is used to determine the reflection coefficients and the distribution of incident energy among the various reflected waves.The effect of different physical features on reflection coefficients and incident energy partitioning is illustrated graphically.The conservation of incident energy at the surface of partially saturated soils is mathematically confirmed at all angles of incidence. 展开更多
关键词 Plane harmonic wave INHOMOGENEOUS Partially saturated soils Reflection coefficients Energy shares
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Performance analysis of SiGe double-gate N-MOSFET
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作者 a.singh D.Kapoor R.Sharma 《Journal of Semiconductors》 EI CAS CSCD 2017年第4期38-44,共7页
The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate(SG) MOSFETs but also provides the better replacement for future technology.In this paper... The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate(SG) MOSFETs but also provides the better replacement for future technology.In this paper,the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET.Furthermore,in this paper the electrical characteristics of Si doublegate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET.The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool.Moreover,we have designed its structure and studied both Id-Vg characteristics for different voltages namely 0.05,0.1,0.5,0.8,1 and 1.5 V and Id-Vd characteristics for different voltages namely 0.1,0.5,1 and 1.5 V at work functions 4.5,4.6 and 4.8 eV for this structure.The performance parameters investigated in this paper are threshold voltage,DIBL,subthreshold slope,GIDL,volume inversion and MMCR. 展开更多
关键词 double gate MOSFET DIBL GIDL volume inversion SiGe Genius tool
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