The paper dealt with the study of fluorescence properties of sol-gel systems doped with rate-earth ions and co-doped with silver. The general problem for these types of inorganic phosphors was a very low absorbance in...The paper dealt with the study of fluorescence properties of sol-gel systems doped with rate-earth ions and co-doped with silver. The general problem for these types of inorganic phosphors was a very low absorbance in the visible range. Therefore, a sensitizer of luminescence of the rare-earth ions should be selected and used. The sensitizer should possess a good absorbance in the visible range and strong interaction with the rare-earth ions. In this study silver ions were selected as the sensitizer.展开更多
This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2...This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.展开更多
文摘The paper dealt with the study of fluorescence properties of sol-gel systems doped with rate-earth ions and co-doped with silver. The general problem for these types of inorganic phosphors was a very low absorbance in the visible range. Therefore, a sensitizer of luminescence of the rare-earth ions should be selected and used. The sensitizer should possess a good absorbance in the visible range and strong interaction with the rare-earth ions. In this study silver ions were selected as the sensitizer.
文摘This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
