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Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film 被引量:2
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作者 a.de pablos-martín S.Tismer Th.Hche 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第5期484-488,共5页
Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate... Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy. 展开更多
关键词 Laser welding Absorbing film Sapphire wafer bondin
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