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Reflection of thermo-elastic wave in semiconductor nanostructures nonlocal porous medium 被引量:1
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作者 HASHMAT Ali adnan jahangir AFTAB Khan 《Journal of Central South University》 SCIE EI CAS CSCD 2020年第11期3188-3201,共14页
The current work is an extension of the nonlocal elasticity theory to fractional order thermo-elasticity in semiconducting nanostructure medium with voids.The analysis is made on the reflection phenomena in context of... The current work is an extension of the nonlocal elasticity theory to fractional order thermo-elasticity in semiconducting nanostructure medium with voids.The analysis is made on the reflection phenomena in context of three-phase-lag thermo-elastic model.It is observed that,four-coupled longitudinal waves and an independent shear vertical wave exist in the medium which is dispersive in nature.It is seen that longitudinal waves are damped,and shear wave is un-damped when angular frequency is less than the cut-off frequency.The voids,thermal and non-local parameter affect the dilatational waves whereas shear wave is only depending upon non-local parameter.It is found that reflection coefficients are affected by nonlocal and fractional order parameters.Reflection coefficients are calculated analytically and computed numerically for a material,silicon and discussed graphically in details.The results for local(classical)theory are obtained as a special case.The study may be useful in semiconductor nanostructure,geology and seismology in addition to semiconductor nanostructure devices. 展开更多
关键词 three-phase lag model semiconductor fractional order time derivative non-local theory NANOSTRUCTURE voids REFLECTION
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Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes
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作者 Muhammad Usman Kiran Saba +2 位作者 adnan jahangir Muhammad Kamran Nazeer Muhammad 《Acta Mechanica Solida Sinica》 SCIE EI CSCD 2018年第3期383-390,共8页
The effect ofelectromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such ... The effect ofelectromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration. 展开更多
关键词 Optoelectronic devices Photonic bandgap materials Visible and ultraviolet sources Light-emitting devices
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