We demonstrate a novel high-accuracy post-fabrication trimming technique to fine-tune the phase of integrated Mach–Zehnder interferometers, enabling permanent correction of typical fabrication-based phase errors. The...We demonstrate a novel high-accuracy post-fabrication trimming technique to fine-tune the phase of integrated Mach–Zehnder interferometers, enabling permanent correction of typical fabrication-based phase errors. The effective index change of the optical mode is 0.19 in our measurement, which is approximately an order of magnitude improvement compared to previous work with similar excess optical loss. Our measurement results suggest that a phase accuracy of 0.078 rad was achievable with active feedback control.展开更多
In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrating high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrieraccumulation...In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrating high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrieraccumulation-based devices potentially offer almost an order of magnitude improvement over those based on carrier depletion. Previously reported accumulation modulator designs only considered vertical metal-oxidesemiconductor(MOS) capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, for the first time to our knowledge, we report experimental demonstration of an all-silicon accumulation phase modulator based on a lateral MOS capacitor. Using a Mach–Zehnder interferometer modulator with a 500-μm-long phase shifter, we demonstrate high-speed modulation up to 25 Gbit∕s with a modulation efficiency(V_πL_π) of 1.53 V·cm.展开更多
We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated an...We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.展开更多
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/L00044X/1,EP/M022757/1)Wolfson FoundationRoyal Society
文摘We demonstrate a novel high-accuracy post-fabrication trimming technique to fine-tune the phase of integrated Mach–Zehnder interferometers, enabling permanent correction of typical fabrication-based phase errors. The effective index change of the optical mode is 0.19 in our measurement, which is approximately an order of magnitude improvement compared to previous work with similar excess optical loss. Our measurement results suggest that a phase accuracy of 0.078 rad was achievable with active feedback control.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/M008975/1,EP/M009416/1,EP/N013247/1,EP/R003076/1)EU Seventh Framework Programme(FP7)Marie-Curie Carrier-Integration-Grant(PCIG13-GA-2013-618116)
文摘In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrating high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrieraccumulation-based devices potentially offer almost an order of magnitude improvement over those based on carrier depletion. Previously reported accumulation modulator designs only considered vertical metal-oxidesemiconductor(MOS) capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, for the first time to our knowledge, we report experimental demonstration of an all-silicon accumulation phase modulator based on a lateral MOS capacitor. Using a Mach–Zehnder interferometer modulator with a 500-μm-long phase shifter, we demonstrate high-speed modulation up to 25 Gbit∕s with a modulation efficiency(V_πL_π) of 1.53 V·cm.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/L00044X/1,EP/N013247/1,EP/L02112G/1)
文摘We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.