Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionizatio...Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In_(0.52)Al_(0.48) As and Al_(0.74)Ga_(0.26) As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.展开更多
基金Defense Advanced Research Projects Agency(DARPA)(W911NF-10-1-0391)Army Research Office(ARO)(W911NF-10-1-0391)
文摘Digital alloy In_(0.52)Al_(0.48) As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In_(0.52)Al_(0.48) As and Al_(0.74)Ga_(0.26) As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.
