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Effect of Temperature on I-V Characteristic for ZnO/CuO
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作者 Mubarak Dirar Farhah Elfadel Omer +5 位作者 Rawia Abdelgani Ali Sulaiman mohamed Abdelnabi Ali Elamin Bashir Elhaj Ahamed Mona Ali abdelsakh suleman mohamed 《World Journal of Nuclear Science and Technology》 2018年第3期128-135,共8页
Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synt... Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60&deg;C to 130&deg;C step 10. 展开更多
关键词 Copper OXIDE ZINC OXIDE THIN Films MONOETHANOLAMINE Temperature CURRENT-VOLTAGE (I-V) Characteristic
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