Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electro...Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes （ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT：PSS/A1）. By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles＇ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold （from 14600 cd/cm2 to 20720 cd/cm2） and maximum current efficiency is improved by 1.29 fold （from 3.12 cd/A to 4.02 cd/A）.展开更多
Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes(Pe-LED...Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes(Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd · m-2 maximum brightness, 45.8 cd · A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.21603012,61735004,and 61722502)
文摘Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes （ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT：PSS/A1）. By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles＇ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold （from 14600 cd/cm2 to 20720 cd/cm2） and maximum current efficiency is improved by 1.29 fold （from 3.12 cd/A to 4.02 cd/A）.
基金financially supported by the National Key Research and Development Program of China (Nos. 2018YFE0125500 and 2016YFB0401600)Program 1112.0 in China (BP0719013), National Natural Science Foundation of China (Nos. 61775034, 51879042, 61674029, and 12005038)+4 种基金Research Fund for International Young Scientists (No. 62050410350)International Cooperative Research Project of Jiangsu Province (No. BZ2018056)Leading Technology of Jiangsu Basic Research Plan (No. BK20192003)Aeronautical Science Foundation of China (No. 201951069001)Jiangsu Province College Graduate Research Innovation Program (No. KYLX160213)。
文摘Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes(Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd · m-2 maximum brightness, 45.8 cd · A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.
