In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG...In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.展开更多
文摘In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.
