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Photoluminescence Properties of LaF<sub>3</sub>-Coated Porous Silicon 被引量:1
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作者 Sinthia Shabnam Mou md. Johurul Islam abu bakar md ismail 《Materials Sciences and Applications》 2011年第6期649-653,共5页
This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coat... This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL. 展开更多
关键词 Porous Silicon Anodic ETCHING PHOTOLUMINESCENCE Surface Coating PHOTONICS
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