Development of novel materials with desirable properties remains at the forefront of modern scientific research.Machine learning(ML),a branch of artificial intelligence,has recently emerged as a powerful technology in...Development of novel materials with desirable properties remains at the forefront of modern scientific research.Machine learning(ML),a branch of artificial intelligence,has recently emerged as a powerful technology in optoelectronic devices for the prediction of various properties and rational design of materials.Metal halide perovskites(MHPs)have been at the centre of attraction owing to their outstanding photophysical properties and rapid development in solar cell application.Therefore,the application of ML in the field of MHPs is also getting much attention to optimize the fabrication process and reduce the cost of processing.Here,we comprehensively reviewed different applications of ML in the designing of both MHP absorber layers as well as complete perovskite solar cells(PSCs).At the end,the challenges of ML along with the possible future direction of research are discussed.We believe that this review becomes an indispensable roadmap for optimizing materials composition and predicting design strategies in the field of perovskite technology in the future.展开更多
Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias o...Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.展开更多
Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector applications.Amplifying the contribution of the depletion region in vdW h...Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector applications.Amplifying the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction photodetectors.Herein,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion region.Attributed to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms respectively.The overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based photodetectors.It indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.展开更多
基金the Deanship of Scientific Research at King Khalid University for funding this work through research groups program under grant number RGP2/86/42the ORSP of Pandit Deendayal Petroleum University for financial support+1 种基金the financial support from DST SERB(CRG/2018/000714)DST Nano Mission(DST/NM/NT/2018/174)。
文摘Development of novel materials with desirable properties remains at the forefront of modern scientific research.Machine learning(ML),a branch of artificial intelligence,has recently emerged as a powerful technology in optoelectronic devices for the prediction of various properties and rational design of materials.Metal halide perovskites(MHPs)have been at the centre of attraction owing to their outstanding photophysical properties and rapid development in solar cell application.Therefore,the application of ML in the field of MHPs is also getting much attention to optimize the fabrication process and reduce the cost of processing.Here,we comprehensively reviewed different applications of ML in the designing of both MHP absorber layers as well as complete perovskite solar cells(PSCs).At the end,the challenges of ML along with the possible future direction of research are discussed.We believe that this review becomes an indispensable roadmap for optimizing materials composition and predicting design strategies in the field of perovskite technology in the future.
基金This work was supported by National Key Research and Development Project(No.2019YFB2203503)the National Natural Science Foundation of China(No.62105211)+8 种基金China Postdoctoral Science Foundation(Nos.2021M702242 and 2022T150431)Natural Science Foundation of Guangdong Province(Nos.2018B030306038 and 2020A1515110373)Guangdong Basic and Applied Basic Research Foundation(No.2022A1515010649)Science and Technology Projects in Guangzhou(No.202201000002)Science and Technology Innovation Commission of Shenzhen(Nos.JCYJ20180507182047316,20200805132016001,and JCYJ20200109105608771)Natural Science Foundation of Jilin Province(No.YDZJ202201ZYTS429)NTUT-SZU Joint Research Program(No.2021008)Authors acknowledge support and funding of King Khalid University through Research Center for Advanced Materials Science(RCAMS)(No.RCAMS/KKU/0010/21)The authors also acknowledge the Photonics Center of Shenzhen University for technical support.
文摘Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.
基金supported by the State Key Research Development Program of China(Grant No.2019YFB2203503)National Natural Science Fund(Grant Nos.61875138,61961136001,62104153,62105211 and U1801254)+3 种基金Natural Science Foundation of Guangdong Province(2018B030306038 and 2020A1515110373)Science and Technology Projects in Guangzhou(no.202201000002)Science and Technology Innovation Commission of Shenzhen(JCYJ20180507182047316 and 20200805132016001)Natural Science Foundation of Jilin Province(Grant No.YDZJ202201ZYTS429)。
文摘Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector applications.Amplifying the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction photodetectors.Herein,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion region.Attributed to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms respectively.The overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based photodetectors.It indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.