This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 ...This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2：F thin films were deposited at a 350 ℃ pending time （5, 15, 60 and 90 s）. The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2：F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 （Ω.cm）-1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2：F thin films deposited by ultrasonic spray was reported.展开更多
We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopan...We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO_2：F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have（101） orientation.The G = 31.82 nm value of the grain size is attained from SnO_2：F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^（-1）,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.展开更多
文摘This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2：F thin films were deposited at a 350 ℃ pending time （5, 15, 60 and 90 s）. The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2：F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 （Ω.cm）-1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2：F thin films deposited by ultrasonic spray was reported.
文摘We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO_2：F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have（101） orientation.The G = 31.82 nm value of the grain size is attained from SnO_2：F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^（-1）,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.
