Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperatu...Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.展开更多
Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit charact...Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions.A high-current Si insulated gate bipolar transistor is used as a circuit breaker in the test circuit rather than the usual short-circuit test conducted without a circuit breaker.The test platform with a circuit breaker does not influence the calculation results regarding the shortcircuitwithstand time and energy,but the SiCMOSFETwill switch off after failure in a very short time.In addition,the degree of failure will be limited and confined to a small area,such that the damage to the chip will be clearly observable,which is significant for short-circuit failure analysis.展开更多
基金supported by Shenzhen Science and Technology Program(Grant No.KQTD2017033016491218).
文摘Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.
基金This work was supported by the Shenzhen Science and Technology Program[Grant No.KQTD2017033016491218].
文摘Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical application.This paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions.A high-current Si insulated gate bipolar transistor is used as a circuit breaker in the test circuit rather than the usual short-circuit test conducted without a circuit breaker.The test platform with a circuit breaker does not influence the calculation results regarding the shortcircuitwithstand time and energy,but the SiCMOSFETwill switch off after failure in a very short time.In addition,the degree of failure will be limited and confined to a small area,such that the damage to the chip will be clearly observable,which is significant for short-circuit failure analysis.
