Influence of Yttrium Ion-Implantation on the Growth Kinetics and Micro-Structure of NiO Oxide Film

Isothermal and cyclic oxidation behaviours of pure and yttrium-implanted nickel were studied at 1000℃ in air. Scanning electronic microscopy （SEM） and transmission electronic microscopy （TEM） were used to examine the micro-morphology and structure of oxide scales formed on the nickel substrate. It was found that Y-implantation significantly improved the anti- oxidation ability of nickel in both isothermal and cyclic oxidizing experiments. Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium. The main reason for the improvement in anti-oxidation of nickel was that Y- implantation greatly reduced the growing speed and grain size of NiO. This fine-grained NiO oxide film might have better high temperature plasticity and could relieve parts of compressive stress by means of creeping, and maintained a ridge character and a relatively low internal stress level. Hence yttrium ion-implantation remarkably enhanced the adhesion of protective NiO oxide scale formed on the nickel substrate.

Growing kinetics and structural characterization of oxide film formed on La-doped Co-40Cr alloy

The isothermal and cyclic oxidizing kinetics of Co-40Cr alloy and its lanthanum ion-implanted samples were studied at 1000 ℃ in air by thermal-gravity analysis （TGA）. Scanning electronic microscopy （SEM） and transmission electronic microscopy （TEM）） were used to examine the oxidized film＇s morphology and the structure after oxidation. Secondary ion mass spectrum （SIMS） method was used to examine the binding energy change of chromium caused by La-doping and its influence on formation of Cr2O3 film. Laser Raman spectrum was used to examine the tress changes within oxidized films. It was found that lanthanum implantation remarkably reduced the isothermal oxidizing rate of Co-40Cr and improved the anti-cracking and anti-spalling properties of Cr2O3 film. The reasons were that the implanted lanthanum reduced the grain size and internal stress of Cr2O3 oxide, increased the high temperature plasticity of oxidized film. Lanthanum mainly existed in the outer surface of Cr2O3 film in the forms of fine La2O3 and LaCrO3 spinel panicles.