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Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells
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作者 Hamedi H R Mehmannavaz M R afshari hadi 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期373-380,共8页
The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can... The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing. 展开更多
关键词 optical bistability semiconductor double quantum wells K-type Y-type and inverted Y-type schemes OB threshold intensity
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