An extraordinary sensing ability of the SnP3-based single-material logical junction for harmful NO_(x)gases was explored in the present work through a set of first-principles electronic structure calculations.As a sen...An extraordinary sensing ability of the SnP3-based single-material logical junction for harmful NO_(x)gases was explored in the present work through a set of first-principles electronic structure calculations.As a sensing platform,a metal-semiconductor-metal lateral junction composed of a single material was designed based on the metallic/semiconducting characteristics of trilayer/monolayer SnP_(3).Lacking a Schottky barrier at the electrode-channel interface,the gas-specific charge transfer between the SnP_(3) layer and gas molecules was precisely detected based on the current-voltage characteristics.NO_(x)gases with strong adsorption strength and charge transfer amount on the SnP_(3)substrate were shown to be particularly well detected in this manner,in terms of either the absolute magnitude of the current or negative differential resistance(NDR)at a reasonably small bias voltage as a sensing signal.This work will provide a new pathway to design a Schottky barrier-free metal-semiconductor junction for highly sensitive sensor applications.展开更多
基金M.S.R.and A.B.K.thank the financial support by the Deutsche Forschungsgemeinschaft(GRK 2247/1(QM3)and CRC 1415(grant no.417590517))The association within SPP 2244 is acknowledged by A.B.K.H.S.K.thanks the Korea Institute of Science and Technology Information(KISTI)for high-performance computing resources(KSC-2021-CRE-0353)as well as financial support(K‐21‐L02‐C10)and the Ministry of Science and ICT of Korea for the research fund through the National R&D program of the National Research Foundation(NRF)(NRF‐2020R1F1A1075573)the Advanced Convergence Research Projects of National Research Council of Science and Technology(NST)(CPS21051-120).
文摘An extraordinary sensing ability of the SnP3-based single-material logical junction for harmful NO_(x)gases was explored in the present work through a set of first-principles electronic structure calculations.As a sensing platform,a metal-semiconductor-metal lateral junction composed of a single material was designed based on the metallic/semiconducting characteristics of trilayer/monolayer SnP_(3).Lacking a Schottky barrier at the electrode-channel interface,the gas-specific charge transfer between the SnP_(3) layer and gas molecules was precisely detected based on the current-voltage characteristics.NO_(x)gases with strong adsorption strength and charge transfer amount on the SnP_(3)substrate were shown to be particularly well detected in this manner,in terms of either the absolute magnitude of the current or negative differential resistance(NDR)at a reasonably small bias voltage as a sensing signal.This work will provide a new pathway to design a Schottky barrier-free metal-semiconductor junction for highly sensitive sensor applications.
