This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a spac...This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.展开更多
This paper considered the implementation of a current control method for switched reluctance motors （SRMs） and presented a novel approach to the accurate online modeling of a three phase 6/4 SRM drive. A three phase...This paper considered the implementation of a current control method for switched reluctance motors （SRMs） and presented a novel approach to the accurate online modeling of a three phase 6/4 SRM drive. A three phase 6/4 SRM is given theoretical calculation of inductance of the SRM model. The SRM was then tested in a Matlab/Simulink environment and numerically analyzed by using nonlinear 2D look-up tables created from its calculated flux linkage and static torque data. The simulation studied the hysteresis and voltage control strategies. The ideal waveform of stator current under the voltage-current condition and improved shape of rotor were proposed.展开更多
文摘This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.
文摘This paper considered the implementation of a current control method for switched reluctance motors （SRMs） and presented a novel approach to the accurate online modeling of a three phase 6/4 SRM drive. A three phase 6/4 SRM is given theoretical calculation of inductance of the SRM model. The SRM was then tested in a Matlab/Simulink environment and numerically analyzed by using nonlinear 2D look-up tables created from its calculated flux linkage and static torque data. The simulation studied the hysteresis and voltage control strategies. The ideal waveform of stator current under the voltage-current condition and improved shape of rotor were proposed.
