β-Ga_(2)O_(3) has received extensive attention as power electronics and UV optoelectronics because of its ultra-wide band gap, excellent chemical and thermal stability. In this work。
SHI irradiation method may be another method except in-situ growth techniques to generate one-dimensional defects in YBCO(YBa_(2)Cu_(3)O_(7)-x)films and has already been studied since 1990[1].
Amorphous HfO_(2) is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the physical limitation of traditional gate dielectric like...Amorphous HfO_(2) is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the physical limitation of traditional gate dielectric like SiO_(2)[1,2].展开更多
Polycrystalline samples of La_(2)Zr_(2)O_(7) pyrochlore were irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters.
More recently,we reported on the first observation of fine structure of latent tracks in rutile TiO_(2),which changes from cylinder to dumbell-shape and then to sandglass shape as a function of the ion path length(Fig...More recently,we reported on the first observation of fine structure of latent tracks in rutile TiO_(2),which changes from cylinder to dumbell-shape and then to sandglass shape as a function of the ion path length(Fig.1(a))[1].展开更多
Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage ope...Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage operation.展开更多
Gallium oxide(Ga_(2)O_(3)),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for t...Gallium oxide(Ga_(2)O_(3)),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for the application of Ga_(2)O_(3) in harsh environment.In this work,it is the first time to observe the amorphous latent track of Ga2O3 single crystal by TEM.TEM images display that the mean diameters of amorphous latent tracks are 7.4,7.5 and 8.7 nm in Ga_(2)O_(3) lamella samples irradiated by Ta ions with energy of 1786,1388 and 829 MeV,respectively.The latent track size meaured by TEM in this work is consisent with that measured by XRD in previous study[1].展开更多
文摘β-Ga_(2)O_(3) has received extensive attention as power electronics and UV optoelectronics because of its ultra-wide band gap, excellent chemical and thermal stability. In this work。
基金National Natural Science Foundation of China(11675233,11690041,11705246)CAS“Light of West China”Program and Natural Science Foundation of Gansu Province(18JR3RA392)。
文摘SHI irradiation method may be another method except in-situ growth techniques to generate one-dimensional defects in YBCO(YBa_(2)Cu_(3)O_(7)-x)films and has already been studied since 1990[1].
文摘Amorphous HfO_(2) is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the physical limitation of traditional gate dielectric like SiO_(2)[1,2].
文摘Polycrystalline samples of La_(2)Zr_(2)O_(7) pyrochlore were irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters.
文摘More recently,we reported on the first observation of fine structure of latent tracks in rutile TiO_(2),which changes from cylinder to dumbell-shape and then to sandglass shape as a function of the ion path length(Fig.1(a))[1].
文摘Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage operation.
文摘Gallium oxide(Ga_(2)O_(3)),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for the application of Ga_(2)O_(3) in harsh environment.In this work,it is the first time to observe the amorphous latent track of Ga2O3 single crystal by TEM.TEM images display that the mean diameters of amorphous latent tracks are 7.4,7.5 and 8.7 nm in Ga_(2)O_(3) lamella samples irradiated by Ta ions with energy of 1786,1388 and 829 MeV,respectively.The latent track size meaured by TEM in this work is consisent with that measured by XRD in previous study[1].
