The wide-band-gap II–VI compound semiconductor ZnO is regarded as a promising single-photon emission(SPE)host material.In this work,we demonstrate that a(Ga_(Zn)–V_(Zn))^(-)complex defect can readily be obtained and...The wide-band-gap II–VI compound semiconductor ZnO is regarded as a promising single-photon emission(SPE)host material.In this work,we demonstrate that a(Ga_(Zn)–V_(Zn))^(-)complex defect can readily be obtained and the density can be controlled in a certain range.In analogy to nitrogen vacancy centers,such a defect in ZnO is expected to be a new single photon source.The optical properties of the(Ga_(Zn)–V_(Zn))^(-)complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements.The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10–20 nanoseconds,indicating a good coherent length for SPE.Finally,a two-level emitter structure is proposed to explain the carrier dynamics.We believe that the photodynamics study of the(Ga_(Zn)–V_(Zn))^(-)complex defect in this work is important for ZnO-based quantum emitters.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674405 and 11675280)
文摘The wide-band-gap II–VI compound semiconductor ZnO is regarded as a promising single-photon emission(SPE)host material.In this work,we demonstrate that a(Ga_(Zn)–V_(Zn))^(-)complex defect can readily be obtained and the density can be controlled in a certain range.In analogy to nitrogen vacancy centers,such a defect in ZnO is expected to be a new single photon source.The optical properties of the(Ga_(Zn)–V_(Zn))^(-)complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements.The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10–20 nanoseconds,indicating a good coherent length for SPE.Finally,a two-level emitter structure is proposed to explain the carrier dynamics.We believe that the photodynamics study of the(Ga_(Zn)–V_(Zn))^(-)complex defect in this work is important for ZnO-based quantum emitters.
