Type-Ⅱ topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-Ⅱ Dirac fermions,which are tilted Dirac cones with various exotic physical properties,such as anisotropic ...Type-Ⅱ topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-Ⅱ Dirac fermions,which are tilted Dirac cones with various exotic physical properties,such as anisotropic chiral anomalies and novel quantum oscillations.Until now,only limited material systems have been confirmed by theory and experiments with the type-Ⅱ Dirac fermions.Here,we investigated the electronic structure of a new type-Ⅱ Dirac semimetal VA1_(3) with angle-resolved photoelectron spectroscopy.The measured band dispersions are consistent with the theoretical prediction,which suggests the Dirac points are located close to(at about 100 meV above) the Fermi level.Our work demonstrates a new type-Ⅱ Dirac semimetal candidate system with different Dirac node configurations and application potentials.展开更多
基金sponsored by the National Key R&D Program of China (Grant No. 2017YFA0305400)the National Natural Science Foundation of China (Grant No. 11674229)Shanghai Municipal Science and Technology Major Project (Grant No. 2018SHZDZX02)。
文摘Type-Ⅱ topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-Ⅱ Dirac fermions,which are tilted Dirac cones with various exotic physical properties,such as anisotropic chiral anomalies and novel quantum oscillations.Until now,only limited material systems have been confirmed by theory and experiments with the type-Ⅱ Dirac fermions.Here,we investigated the electronic structure of a new type-Ⅱ Dirac semimetal VA1_(3) with angle-resolved photoelectron spectroscopy.The measured band dispersions are consistent with the theoretical prediction,which suggests the Dirac points are located close to(at about 100 meV above) the Fermi level.Our work demonstrates a new type-Ⅱ Dirac semimetal candidate system with different Dirac node configurations and application potentials.
