Electric-field control of topological magnetic states in thinfilm heterostructures is promising for applications in nextgeneration memory or logic devices with ultrahigh density and low-power consumption.Multiferroic ...Electric-field control of topological magnetic states in thinfilm heterostructures is promising for applications in nextgeneration memory or logic devices with ultrahigh density and low-power consumption.Multiferroic materials,where spin and polar degrees of freedom coexist,provide a versatile playground to manipulate magnetism(converse magnetoelectric effect).Here,we report that the topological spin textures can be controlled by electric field in rhombohedral BiFeO_(3)/monoclinic La_(0.67)Sr_(0.33)MnO_(3)thin-film heterostructure at room temperature.展开更多
基金financially supported by the Basic Science Center Program of National Natural Science Foundation of China(No.51788104)the National Natural Science Foundation of China(Nos.11974052,12074365)the National Key R&D Program of China(No.2021YFA0718700)。
文摘Electric-field control of topological magnetic states in thinfilm heterostructures is promising for applications in nextgeneration memory or logic devices with ultrahigh density and low-power consumption.Multiferroic materials,where spin and polar degrees of freedom coexist,provide a versatile playground to manipulate magnetism(converse magnetoelectric effect).Here,we report that the topological spin textures can be controlled by electric field in rhombohedral BiFeO_(3)/monoclinic La_(0.67)Sr_(0.33)MnO_(3)thin-film heterostructure at room temperature.
