Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFeOhave been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis di...Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFeOhave been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott–Schottky plots show that the band structure of the CaFeOnanorods is narrower than that of the CaFeOnanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFeOnanorods. The appropriate ratio between the molten salt and the CaFeOprecursors plays an important role in inhibiting the growth of the crystals along the(201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFeOsemiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal plane.Furthermore, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies.展开更多
基金supports from the National Natural Science Foundation of China(nos.21473189 and21503100)the 973 National Basic Research Program of China(no.2014CB239401)the Natural Science Foundation of Jiangxi Province of China(no.20151BAB213010)
文摘Pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFeOhave been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott–Schottky plots show that the band structure of the CaFeOnanorods is narrower than that of the CaFeOnanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFeOnanorods. The appropriate ratio between the molten salt and the CaFeOprecursors plays an important role in inhibiting the growth of the crystals along the(201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFeOsemiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal plane.Furthermore, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies.
