We report a comprehensive study of electrical transport properties of stoichiometric (Mg,Ni)-ferrite in the temperature range 77 ≤ T ≤ 300K, applying magnetic field upto 1T in the frequency range 20 Hz-1 MHz. After ...We report a comprehensive study of electrical transport properties of stoichiometric (Mg,Ni)-ferrite in the temperature range 77 ≤ T ≤ 300K, applying magnetic field upto 1T in the frequency range 20 Hz-1 MHz. After ball milling of MgO, NiO and ?-Fe2O3 and annealing at 1473K, a (Mg,Ni)-ferrite phase is obtained. The temperature dependency of dc resistivity indicates the prevalence of a simple hopping type charge transport in all the investigated samples. The activation energy decreases by annealing the samples by 1473K. The dc magnetoresistivity of the samples is positive, which has been explained by using wave function shrinkage model. The frequency dependence of conductivity has been described by power law and the frequency exponent ‘s’ is found to be anomalous temperature dependent for ball milling and annealing samples. The real part of the dielectric permittivity at a fixed frequency was found to follow the power law ?/(f,T) ? Tn. The magnitude of the temperature exponent ‘n’ strongly depends on milling time and also on annealing temperature. The dielectric permittivity increases with milling and also with annealing. An analysis of the complex impedance by an ideal equivalent circuit indicates that the grain boundary contribution is dominating over the grain contribution in conduction process.展开更多
Nanocrystalline cadmium-zinc ferrite samples were prepared by ball milling method and its electrical transport property were investigated within a temperature range 77 K ≤ T ≤ 300 K in presence of a magnetic field u...Nanocrystalline cadmium-zinc ferrite samples were prepared by ball milling method and its electrical transport property were investigated within a temperature range 77 K ≤ T ≤ 300 K in presence of a magnetic field up to 1T and in a frequency range 20 Hz to 1 MHz. The investigated samples follow a simple hopping type charge transport. The dc magnetoconductivity has been explained in terms of orbital magnetoconductivity theory. The alternating current conductivity follows the universal dielectric response σ'/(f) ∝ Tnfs. The values of ‘s’ have a decreasing trend with temperature. The temperature exponent ‘n’ depends on frequency. The dielectric permittivity of the samples depends on the grain resistance and interfacial grain boundary resistance. The ac magnetoconductivity is positive which can be explained in terms of impedance of the sample.展开更多
文摘We report a comprehensive study of electrical transport properties of stoichiometric (Mg,Ni)-ferrite in the temperature range 77 ≤ T ≤ 300K, applying magnetic field upto 1T in the frequency range 20 Hz-1 MHz. After ball milling of MgO, NiO and ?-Fe2O3 and annealing at 1473K, a (Mg,Ni)-ferrite phase is obtained. The temperature dependency of dc resistivity indicates the prevalence of a simple hopping type charge transport in all the investigated samples. The activation energy decreases by annealing the samples by 1473K. The dc magnetoresistivity of the samples is positive, which has been explained by using wave function shrinkage model. The frequency dependence of conductivity has been described by power law and the frequency exponent ‘s’ is found to be anomalous temperature dependent for ball milling and annealing samples. The real part of the dielectric permittivity at a fixed frequency was found to follow the power law ?/(f,T) ? Tn. The magnitude of the temperature exponent ‘n’ strongly depends on milling time and also on annealing temperature. The dielectric permittivity increases with milling and also with annealing. An analysis of the complex impedance by an ideal equivalent circuit indicates that the grain boundary contribution is dominating over the grain contribution in conduction process.
文摘Nanocrystalline cadmium-zinc ferrite samples were prepared by ball milling method and its electrical transport property were investigated within a temperature range 77 K ≤ T ≤ 300 K in presence of a magnetic field up to 1T and in a frequency range 20 Hz to 1 MHz. The investigated samples follow a simple hopping type charge transport. The dc magnetoconductivity has been explained in terms of orbital magnetoconductivity theory. The alternating current conductivity follows the universal dielectric response σ'/(f) ∝ Tnfs. The values of ‘s’ have a decreasing trend with temperature. The temperature exponent ‘n’ depends on frequency. The dielectric permittivity of the samples depends on the grain resistance and interfacial grain boundary resistance. The ac magnetoconductivity is positive which can be explained in terms of impedance of the sample.
