High Performance for Cu(In,Ga)Se2 Quaternary System-Based Solar Cells with Alternative Buffer Layers

In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and η of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.

2D Modeling of Solar Cell Radial Junction: Study of Carriers Charge Density and Photocurrent Density in Static Mode under Monochromatic Illumination

A theoretical study of a polysilicon solar cell with a radial junction in static regime under monochromatic illumination is presented in this paper. The junction radial solar cell geometry is illustrated and described. The carriers’ diffusion equation is established and solved under quasi-neutral base assumption with boundaries conditions and Bessel equations. New analytical expressions of electrons and holes density and photocurrent are found. The wavelength and structural parameters (base radius, emitter thickness) influences on charge carriers density and photocurrent are shown and examined.

Effective Lifetime Experimental Measurement under External Magnetic Field in Transient Dynamic State by Open Circuit Voltage Decay Method

In this work, we present an experimental transient 3-Dimensionnal study for the minority charge carriers’ effective lifetime measurement under magnetic field in transient dynamic state. The magnitude of the magnetic field B is varied from 0 mT to 0.03 mT. The method used is mainly based on the open circuit voltage decay method. The solar cell is injected by a low electrical excitation which protects against capacitance effects. Our approach is based on the open circuit voltage decay response analysis. From an experimental set-up, we get the transient voltage data on a digital scope. The data are used for plotting transient voltage decay curves. The curves obtained and analyzed are fitted in their linear zone. This zone presents an ideal decay which permits to get good values of lifetime. The slope of the linear decay is inversely proportional to effective lifetime. The results of fitting permit determinate the effective charge carriers’ lifetime directly. The results obtained are then presented and analyzed. The observations indicate that the charge carriers effective lifetime decrease when the magnetic field increases.

Renewable Energies in Africa, Context and Socio-Economic Challenge

In this paper, we have shown that Africa has an enormous wealth of renewable energy resources among the most important in the world such as the strong sunshine, Congo and Nile Rivers respectively among the most powerful and the longest in the world. We have underlined the presence of important forests, rich subsoil in mineral elements, and strong winds. In addition to a rapidly growing human capital, Africa, therefore, has at its disposal all the factors enabling it to initiate sustainable and inclusive socio-economic development. We have shown that the transformation of these renewable energies is an opportunity for Africa to reach its socio-economic challenges. The development of renewable energies in Africa will be a source of many financial benefits and advantages both in terms of improving living conditions and carrying out activities. The electrical supply of rural areas of Africa represents a considerable issue, which can be a propellant factor in long-term socio-economic development if the conditions of use of clean fuel and cooking technologies, especially sanitary are taken into account. The provision of modern energy services can contribute to the creation of jobs for young people upstream. Among other things, we can note the development of local skills, the creation of income-generating activities, and the improvement of hygiene and health measures which are necessary conditions for family and social well-being. This requires a policy focused, on research in general and in particular on semiconductors that participate in the transformation of photovoltaic solar energy. We have stressed that Africa which is currently experiencing a period of economic growth and sustained transformation must be very looking at in its energy policy and give pride of place to renewable energies to initiate sustainable socio-economic development, equitable and inclusive different social strata both in rural areas and urban areas.

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

This manuscript presents a simple method for excess minority carriers’ lifetime measurement within the base region of p-n junction polycrystalline solar cell in transient mode. This work is an experimental transient 3-Dimensionnal study. The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5 and under magnetic field in transient state. The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier life-time is calculated by fitting the linear zone of the transient voltage decay curve because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the lifetime. The external magnetic effects on minority carriers’ effective lifetime is then presented and analyzed. The analysis shows that the charge carrier’s effective lifetime decrease with the magnetic field increase.

2D Modeling of Solar Cell p-n Radial Junction: Study of Photocurrent Density and Quantum Efficiency in Static Mode under Monochromatic Illumination

A theoretical study of a polysilicon solar cell with a radial junction in static regime under monochromatic illumination is presented in this paper. The junction radial solar cell geometry is illustrated and described. The carriers’ diffusion equation is established and solved under quasi-neutral base assumption with boundaries conditions and Bessel equations. New analytical expressions of electrons and holes photocurrent density and quantum efficiency are found. The wavelength and structural parameters (base radius, base thickness and wavelength) influences on photocurrent density and quantum efficiency are carried out and examined.

Optimization of Mo/Cu(In,Ga)Se2/CdS/ZnO Hetero-Junction Solar Cell Performance by Numerical Simulation with SCAPS-1D

The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.