Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has be...Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has been developed for LiNbO_(3) by using X-ray diffraction.The experimental results showed that the dislocation density of the near-surface layer reached the minimum at the thermal annealing temperature of 500℃,with the analysis being performed when wet selective etching and X-ray diffraction methods were used.We concluded that homogenization annealing is an effective technique to improve the quality of photonic circuits based on LiNbO_(3).The results obtained are important for optical waveguides,LiNbO_(3)-on-insulator-based micro-photonic devices,electro-optical modulators,sensors,etc.展开更多
文摘Density of dislocations in the near-surface layer was investigated in X-cut LiNbO_(3) depending on thermal annealing in the temperature range of 400℃–600℃.A dynamic model of randomly distributed dislocations has been developed for LiNbO_(3) by using X-ray diffraction.The experimental results showed that the dislocation density of the near-surface layer reached the minimum at the thermal annealing temperature of 500℃,with the analysis being performed when wet selective etching and X-ray diffraction methods were used.We concluded that homogenization annealing is an effective technique to improve the quality of photonic circuits based on LiNbO_(3).The results obtained are important for optical waveguides,LiNbO_(3)-on-insulator-based micro-photonic devices,electro-optical modulators,sensors,etc.
