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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology 被引量:1
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作者 Joost Romijn Sten Vollebregt +7 位作者 Luke M.Middelburg BrahimEl Mansouri Henk W.van Zeijl alexandermay Tobias Erlbacher Johan Leijtens Guoqi Zhang Pasqualina M.Sarro 《Microsystems & Nanoengineering》 SCIE EI CSCD 2022年第5期207-223,共17页
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100mm^(2) chip.The reported image sensor ... This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100mm^(2) chip.The reported image sensor offers serial digital,analog,and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60μW,which are significant improvements over previous reports.UV optoelectronics have applications in flame detection,satellites,astronomy,UV photography,and healthcare.The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers. 展开更多
关键词 OPTOELECTRONIC IMAGE CARBIDE
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